Back to results
US 5,248,564 AGranted
C-axis perovskite thin films grown on silicon dioxide
AssigneeBell Communications Research, Inc.
InventorRamamoorthy Ramesh
Life of this patent
Estimating the term…
Abstract
A method and resulting structure for growing a crystalline perovskite film (16) on a silicon dioxide layer (12) by means of an intermediate template layer (14) of a c-axis oriented layered perovskite, such as bismuth titanate. The perovskite film can be ferroelectric lead-lanthanum zirconate titanate or conductive cubic metal oxides used as electrodes for the ferroelectric.
Claims11
A perovskite thin-film structure comprising:
- a substrate having a surface comprising silicon oxide;
- a substantially c-axis oriented template layer comprising a layered perovskite formed directly on said silicon oxide;
- and
- at least one perovskite layer formed crystallographically c-axis oriented sequentially over said template layer.
1 more element
A perovskite thin-film structure comprising:
- a substrate having a three-dimensionally random crystalline orientation;
- a substantially c-axis oriented template layer comprising a layered perovskite formed directly on said silicon oxide, said template layer perovskite being substantially chemically inert with respect to said substrate;
- and
- at least one perovskite layer formed crystallographically c-axis oriented sequentially over said template layer.
1 more element
Dependencies are inferred from the claim text.