Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type

A thin-film transistor panel used for active matrix display devices, comprising:

• a transparent insulating substrate;
• thin-film transistors which are arranged in rows and columns on said substrate and each of which comprises a non-single-crystal silicon semiconductor film arranged above said substrate, an insulating film on said semiconductor film, at least three electrodes including a pair of first electrodes and a second electrode, the pair of first electrodes being spaced a specified distance apart in a plane and electrically connected to said semiconductor film so as to form a channel region of the transistor, the second electrode being arranged to sandwich at least said insulating film between itself and the pair of first electrodes, either the first electrodes or the second electrode being arranged on said substrate to form a lower-layer electrode or electrode pair, at least the lower-layer electrode of electrode pair being made of titanium-containing aluminum with a titanium content of 2.2% or more by weight;
• a plurality of control signal lines which are formed so as to extend in the row or column direction and which connect to the second electrodes of the thin-film transistors arranged in a matrix on a row or column basis to supply control signals to said thin-film transistors;
• a plurality of data signal lines which are formed to extend in the row or column direction and which connect to one of each pair of first electrodes of the thin-film transistors arranged in matrix on a row or column basis to supply data signals to said thin-film transistors;
• and
• transparent pixel electrodes on said substrate and arranged to correspond to said individual thin-film transistors and which are connected to the other of each pair of first electrodes so that data signals are applied to the pixel electrodes via said thin-film transistors.

A liquid-crystal matrix display device using thin-film transistors, comprising:

• a first transparent insulating substrate;
• a plurality of gate lines made of titanium-containing aluminum with a titanium content of 2.2% or more by weight and arranged to extend in a row or column direction on said first substrate;
• a plurality of gate electrodes formed out of titanium-containing aluminum with a titanium content of 2.2% or more by weight on said first substrate and arranged to connect to the individual gate lines;
• a gate insulating film which is formed substantially over said first substrate to cover said plurality of gate lines and gate electrodes and which receives a control signal;
• a non-single-crystal silicon semiconductor film arranged on said gate insulating film to cover said gate electrode;
• drain and source electrodes spaced a specified distance apart on said semiconductor film and electrically connected to said semiconductor film to form a channel region of a transistor;
• a plurality of data lines on said gate insulating film and arranged to cross said gate lines at right angles and which connect to said plurality of drain electrodes to receive data signals;
• transparent pixel electrodes arranged in rows and columns on said gate insulating film and connected to said individual source electrodes;
• a second substrate a specified distance apart from said first substrate to face each other and bonded one another with seal material;
• at least one opposite electrode formed on the surface of said second substrate facing said first substrate to face more than one of said pixel electrodes;
• and
• liquid crystal sealed in a region enclosed by said first substrate, second substrate, and seal member and oriented in a specified state.