Nucleation control of diamond films by microlithographic patterning

Abstract

A high temperature resist process is combined with microlithographic patterning for the production of materials, such as diamond films, that require a high temperature deposition environment. A conventional polymeric resist process may be used to deposit a pattern of high temperature resist material. With the high temperature resist in place and the polymeric resist removed, a high temperature deposition process may proceed without degradation of the resist pattern. After a desired film of material has been deposited, the high temperature resist is removed to leave the film in the pattern defined by the resist. For diamond films, a high temperature silicon nitride resist can be used for microlithographic patterning of a silicon substrate to provide a uniform distribution of diamond nucleation sites and to improve diamond film adhesion to the substrate. A fine-grained nucleation geometry, established at the nucleation sites, is maintained as the diamond film is deposited over the entire substrate after the silicon nitride resist is removed. The process can be extended to form microstructures of fine-grained polycrystalline diamond, such as rotatable microgears and surface relief patterns, that have the desirable characteristics of hardness, wear resistance, thermal conductivity, chemical inertness, anti-reflectance, and a low coefficient of friction.

Dependencies are inferred from the claim text.