US 5,241,210 A · High breakdown voltage semiconductor device · patentgrep

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Abstract

A high breakdown voltage semiconductor device includes a semiconductor substrate, a first insulating film formed on the semiconductor substrate, a first semiconductor region formed on the first insulating film, a second semiconductor region of a first conductivity type having an impurity concentration higher than that of the first semiconductor region and selectively formed on a surface portion of the first semiconductor region, a third semiconductor region having an impurity concentration lower than that of the second semiconductor region and formed on the surface portion of the first semiconductor region so as to be adjacent to or near the second semiconductor region and a fourth semiconductor region of a second conductivity type having an impurity concentration higher than that of the first semiconductor region and formed on the surface portion of the first semiconductor region so as to be outside the third semiconductor region. A fifth semiconductor region having an impurity concentration lower than that of the second or fourth semiconductor region is formed on a bottom portion of the first semiconductor region. When a reverse bias is applied between the second and fourth semiconductor regions, a depletion layer extends vertically in the first semiconductor region and laterally in the fifth semiconductor region. The applied voltage is divided in both the directions and a high breakdown voltage can be obtained.

Claims14

Dependent claims

A high breakdown voltage semiconductor device, comprising:

a composite substrate obtained by directly bonding a high-resistance semiconductor substrate having an insulating film formed on at least one surface thereof to a semiconductor substrate, said insulating film being formed at an interface thereof;
a first semiconductor region constituting part of said high-resistance semiconductor substrate and isolated from other regions by an isolating region;
a second semiconductor region of a first conductivity type having an impurity concentration higher than that of said first semiconductor region and selectively formed in a surface portion of said first semiconductor region;
a third semiconductor region having an impurity concentration lower than that of said second semiconductor region and formed in the surface portion of said first semiconductor region so as to be adjacent to or near said second semiconductor region;
a fourth semiconductor region of a second conductivity type having an impurity concentration higher than that of said first semiconductor region and formed in the surface portion of said first semiconductor region so as to be outside said third semiconductor region;
a fifth semiconductor region having an impurity concentration lower than that of said second and fourth semiconductor regions, formed on a bottom portion of said first semiconductor region, and having a dose of impurity atoms not more than 5.times.10.sup.14 /cm.sup.2 ;
and
a sixth semiconductor region of a second conductivity type having an impurity concentration higher than that of said fifth semiconductor region and formed so as to extend from said fourth semiconductor region to said fifth semiconductor region, said first, third and fifth semiconductor regions being depleted when a high voltage is applied between said second and fourth semiconductor regions;
wherein said first semiconductor region is of the first conductivity type and said fifth semiconductor region is of the second conductivity type.

6 more elements

A high breakdown voltage semiconductor device, comprising:

a composite substrate obtained by directly bonding a high-resistance semiconductor substrate having an insulating film formed on at least one surface thereof to a semiconductor substrate, said insulating film being formed at an interface thereof;
a first semiconductor region constituting part of said high-resistance semiconductor substrate and isolated from other regions by an isolating region;
a second semiconductor region of a first conductivity type having an impurity concentration higher than that of said first semiconductor region and selectively formed in a surface portion of said first semiconductor region;
a third semiconductor region having an impurity concentration lower than that of said second semiconductor region and formed in the surface portion of said first semiconductor region so as to be adjacent to or near said second semiconductor region;
a fourth semiconductor region of a second conductivity type having an impurity concentration higher than that of said first semiconductor region and formed in the surface portion of said first semiconductor region so as to be outside said third semiconductor region;
a fifth semiconductor region having an impurity concentration lower than that of said second and fourth semiconductor regions, formed on a bottom portion of said first semiconductor region, and having a dose of impurity atoms not more than 5.times.10.sup.14 /cm.sup.2 ;
and
a sixth semiconductor region of a second conductivity type having an impurity concentration higher than that of said fifth semiconductor region and formed so as to extend from said fourth semiconductor region to said fifth semiconductor region, said first, third and fifth semiconductor regions being depleted when a high voltage is applied between said second and fourth semiconductor regions;
wherein said first semiconductor region is of the second conductivity type and said fifth semiconductor region is of the first conductivity type.

6 more elements

A high breakdown voltage semiconductor device, comprising:

a composite substrate obtained by directly bonding a high-resistance semiconductor substrate having an insulating film formed on at least one surface thereof to a semiconductor substrate, said insulating film being formed at an interface thereof;
a first semiconductor region constituting part of said high-resistance semiconductor substrate and isolated from other regions by an isolating region;
a second semiconductor region of a first conductivity type having an impurity concentration higher than that of said first semiconductor region and selectively formed in a surface portion of said first semiconductor region;
a third semiconductor region having an impurity concentration lower than that of said second semiconductor region and formed in the surface portion of said first semiconductor region so as to be adjacent to or near said second semiconductor region;
a fourth semiconductor region of a second conductivity type having an impurity concentration higher than that of said first semiconductor region and formed in the surface portion of said first semiconductor region so as to be outside said third semiconductor region;
a fifth semiconductor region having an impurity concentration lower than that of said second and fourth semiconductor regions, formed on a bottom portion of said first semiconductor region, and having a dose of impurity atoms not more than 5.times.10.sup.14 /cm.sup.2 ;
and
a sixth semiconductor region of a second conductivity type having an impurity concentration higher than that of said fifth semiconductor region and formed so as to extend from said fourth semiconductor region to said fifth semiconductor region, said first, third and fifth semiconductor regions being depleted when a high voltage is applied between said second and fourth semiconductor regions;
wherein a total amount of impurity per unit area of each of said third and fifth embodiment regions is 0.1.times.10.sup.12 to 3.times.10.sup.12 /cm.sup.2.

6 more elements

A high breakdown voltage semiconductor device, comprising:

a composite substrate obtained by directly bonding a high-resistance semiconductor substrate having an insulating film formed on at least one surface thereof to a semiconductor substrate, said insulating film being formed at an interface thereof;
a first semiconductor region constituting part of said high-resistance semiconductor substrate and isolated from other regions by an isolating region;
a second semiconductor region of a first conductivity type having an impurity concentration higher than that of said first semiconductor region and selectively formed in a surface portion of said first semiconductor region;
a third semiconductor region having an impurity concentration lower than that of said second semiconductor region and formed in the surface portion of said first semiconductor region so as to be adjacent to or near said second semiconductor region;
a fourth semiconductor region of a second conductivity type having an impurity concentration higher than that of said first semiconductor region and formed in the surface portion of said first semiconductor region so as to be outside said third semiconductor region;
a fifth semiconductor region having an impurity concentration lower than that of said second and fourth semiconductor regions, formed on a bottom portion of said first semiconductor region, and having a dose of impurity atoms not more than 5.times.10.sup.14 /cm.sup.2 ;
and
a sixth semiconductor region of a second conductivity type having an impurity concentration higher than that of said fifth semiconductor region and formed so as to extend from said fourth semiconductor region to said fifth semiconductor region, said first, third and fifth semiconductor regions being depleted when a high voltage is applied between said second and fourth semiconductor regions;
wherein a total amount of impurity per unit area of said fifth semiconductor region is 0.5.times.10.sup.12 to 2.0.times.10.sup.12 /cm-.sup.2.

6 more elements

A high breakdown voltage semiconductor device, comprising:

a composite substrate obtained by directly bonding a high-resistance semiconductor substrate having an insulating film formed on at least one surface thereof to a semiconductor substrate, said insulating film being formed at an interface thereof;
a first semiconductor region constituting part of said high-resistance semiconductor substrate and isolated from other regions by an isolating region;
a second semiconductor region of a first conductivity type having an impurity concentration higher than that of said first semiconductor region and selectively formed in a surface portion of said first semiconductor region;
a third semiconductor region having an impurity concentration lower than that of said second semiconductor region and formed in the surface portion of said first semiconductor region so as to be adjacent to or near said second semiconductor region;
a fourth semiconductor region of a second conductivity type having an impurity concentration higher than that of said first semiconductor region and formed in the surface portion of said first semiconductor region so as to be outside said third semiconductor region;
a fifth semiconductor region having an impurity concentration lower than that of said second and fourth semiconductor regions, formed on a bottom portion of said first semiconductor region, and having a dose of impurity atoms not more than 5.times.10.sup.14 /cm.sup.2 ;
a sixth semiconductor region of a second conductivity type having an impurity concentration higher than that of said fifth semiconductor region and formed so as to extend from said fourth semiconductor region to said fifth semiconductor region, said first, third and fifth semiconductor regions being depleted when a high voltage is applied between said second and fourth semiconductor regions;
a first electrode formed on said fourth semiconductor region;
a second electrode formed on said second semiconductor region;
and
a high resistance layer connecting said first electrode and said second electrode.

8 more elements

Dependencies are inferred from the claim text.

Facts

Application: 07/642,565Filed 18 Jan 1991 · continuation in part
Priority: JP 62-4356426 Feb 1987
Granted: 31 Aug 1993
Term ends: Not estimatedThe source records don’t support an estimate.

Classification30 codes

H10D 30/657
Lateral dmos [ldmos] fets: having substrates comprising insulating layers, e.g. SOI-LDMOS transistors
H10D 8/411
Diodes: pN diodes having planar bodies
H10D 12/421
Insulated-gate bipolar transistors [IGBT]: on insulating layers or insulating substrates, e.g. thin-film IGBTs
H10D 18/251
Thyristors: lateral thyristors

Family

Serial161,102Parent of this continuation-in-part · filed 26 Feb 1988
Serial236,746Parent of this continuation-in-part · filed 26 Aug 1988
US 5,241,210 AThis patent

From the US filing history. Foreign family members aren’t listed.

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