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US 5,240,906 AGranted
Enhanced superconducting field-effect transistor
AssigneeInternational Business Machines Corporation
InventorsJohannes G. Bednorz, Jochen D. Mannhart, Carl A. Mueller, Darrell Schlom
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Abstract
An inverted MISFET structure with a high transition temperature superconducting channel comprises a gate substrate, an interfacial layer with one or more elements of the VIII or IB subgroup of the periodic table of elements, an insulating layer and a high transition temperature superconducting channel. An electric field, generated by a voltage applied to its gate alters the conductivity of the channel.
Claims15
A field-effect transistor, comprising:
- a substrate layer having gate contact electrode disposed thereon;
- an additional layer having a thickness of less than 100 .ANG., and being diffused into and disposed on said substrate layer;
- an insulating layer being disposed on said additional layer, said additional layer being an interface between said substrate layer and said insulating layer so as to allow for epitaxy therebetween;
- and
- a high transition temperature superconducting current channel layer being disposed on said insulating layer, and having a source contact electrode and a drain contact electrode disposed thereon.
2 more elements
Dependencies are inferred from the claim text.