Process and apparatus for making discrete type substrates by re-slicing a wafer
AssigneeNaoetsu Electronics Company
InventorsTsutomu Satoh, Kouichi Nishimaki
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AssigneeNaoetsu Electronics Company
InventorsTsutomu Satoh, Kouichi Nishimaki
Estimating the term…
This invention relates to a process and an apparatus for making a substrate of a semiconductor of a monolithic silicon wafer, or the like, for use as a discrete element such as a transistor, diode, or the like. In particular, the invention is directed to re-slicing the silicon wafer into two further pieces, to dope impurity diffused layers on both sides but not to provide any impurity diffused layer in the core portion of the silicon wafer. The re-slicing process is performed from substantially the center portion of its core thickness of the wafer so as to provide each re-sliced surface as a plain surface without any impurity diffused layer and for doping a further new impurity diffused layer, so as to obtain two pieces of a substrate as discrete elements simultaneously from one piece of the wafer by the re-slicing process and apparatus of the invention.
A process for making a substrate of a semiconductor for use as a discrete element from a wafer including opposed surfaces, edges, and a core portion, comprising the steps of:
A process for making a substrate of a semiconductor for use as a discrete element from a wafer including opposed major surfaces, edge surfaces, and a core portion, comprising the steps of:
Dependencies are inferred from the claim text.