Method for forming patterned films on a substrate

A method of forming patterned films onto a semiconductor substrate comprising the steps of:

• a) depositing a first layer of a first material;
• b) conditioning said first layer to be thermally stable under deposition conditions required for film formation and to have a first mechanical bonding strength with a release material, the conditioned first layer further being soluble in a stripper solution, wherein said stripper solution is comprised of N-alkyl-2-pyrrolidone, 1,2-propanediol and tetraalkylammonium hydroxide;
• c) depositing a release layer of said release material onto said first layer;
• d) patterning a film pattern through said first and said release layers;
• e) depositing a film layer to thereby form film onto the semiconductor substrate in the said film pattern;
• f) removing all layers above said conditioned first layer by applying an adhesive backed tape to said film layer and applying a pulling force to said tape;
• and,
• g) dissolving said conditioned first layer in said stripper solution.

A method of forming patterned films onto a semiconductor substrate comprising the steps of:

• a) depositing a first layer of a first material;
• b) conditioning said first layer to be thermally stable under deposition conditions required for film formation and to have a first mechanical bonding strength with a release material, the conditioned first layer further being soluble in a stripper solution, wherein said stripper solution is comprised of:
• i) 60-90% by weight of a N-alkyl-2-pyrrolidone;
• ii) 10-40% by weight of a 1,2-propanediol;
• iii) a sufficient amount of a tetraalkylammonium hydroxide to provide a solution being from 0.1 to 0.22N;
• c) depositing a release layer of said release material onto said first layer;
• d) patterning a film pattern through said first and said release layers;
• e) depositing a film layer to thereby form film onto the semiconductor substrate in the said film pattern;
• f) removing all layers above said conditioned first layer by applying an adhesive backed tape to said film layer and applying a pulling force to said tape;
• and,
• g) dissolving said conditioned first layer in said stripper solution.

A method of forming patterned films onto a semiconductor substrate comprising the steps of:

• a) depositing a first layer of a first material;
• b) conditioning said first layer to be thermally stable under deposition conditions required for film formation and to have a first mechanical bonding strength with a release material, the conditioned first layer further being soluble in a stripper solution;
• c) depositing a release layer of said release material onto said first layer, wherein said release material is comprised of polyether sulfone;
• d) patterning a film pattern through said first and said release layers;
• e) depositing a film layer to thereby form film onto the semiconductor substrate in the said film pattern;
• f) removing all layers above said conditioned first layer by applying an adhesive backed tape to said film layer and applying a pulling force to said tape;
• and,
• g) dissolving said conditioned first layer in said stripper solution.