Method of forming a stacked capacitor with striated electrode

A method of forming a capacitor on a semiconductor wafer comprising the following steps:

• providing a layer of insulating dielectric atop a semiconductor wafer to a selected thickness;
• in a dry etching reactor, selectively anisotropically dry etching a capacitor contact opening having a minimum selected open dimension into the insulating dielectric layer utilizing selected gas flow rates of a reactive gas component and an inert gas bombarding component, the flow rate of the bombarding component significantly exceeding the flow rate of the reactive component to effectively produce a capacitor contact opening having grooved striated sidewalls and thereby defining female capacitor contact opening striations;
• providing a layer of electrically conductive material atop the wafer and within the striated capacitor contact opening to a selected thickness which is less than the selected open dimension, the electrically conductive material filling the grooved striations of the capacitor contact opening thereby defining striated external conductive material sidewalls within the capacitor contact opening which are male complementary in shape to the female capacitor contact opening striations;
• removing at least a portion of the conductive material layer to define an isolated capacitor storage node within the insulating dielectric;
• etching the insulating dielectric layer selectively relative to the conductive material sufficiently to expose at least a portion of the external male striated conductive material sidewalls;
• providing a conformal capacitor dielectric layer atop the etched conductive material and over its exposed striated sidewalls;
• and
• providing a conformal capacitor cell layer of electrically conductive material atop the capacitor dielectric layer.