Integrated thin film transistor electrographic writing head
AssigneeXerox Corporation
InventorsVictor M. Da Costa, Patrick A. O'Connell
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AssigneeXerox Corporation
InventorsVictor M. Da Costa, Patrick A. O'Connell
Estimating the term…
An integrated thin film electrographic writing head. The writing head has integrated therein a plurality of marking electrodes or nibs arranged in a linear array for writing onto a medium, and a plurality of high voltage driving circuits for driving the nibs. The write head also includes a plurality of latches each connected to the high voltage driving circuits, a plurality of memory cells each connected to the latches, a plurality of buffers, each buffer supplying a select line to the plurality of memory cells, and a plurality of selection elements, supplying a selection signal to each of the buffers to drive a segment of memory cells. The integrated memory means and latching means allow for simultaneous latching and writing of an entire scanline of data.
An integrated thin film transistor electrographic writing head, comprising:
A method for operating an electrographic writing head for writing image data onto a medium said electrographic writing multiple lines of writing head having a plurality of four-phased dynamic shift registers, each of said dynamic shift registers connected to buffers, said buffers one of a plurality of connected to a plurality of memory cells, each of said memory cells connected to one of a plurality of latches, said latches are connected to high voltage driver cells, said high voltage driver cells are connected to writing electrodes, said writing electrodes writes data onto a medium, including the steps of:
A method for operating an electrographic writing head for writing multiple lines of image data onto a medium in a writing direction, said electrographic writing head having a plurality of sections, said sections are aligned in a linear array wherein one or more of said sections are offset from others of said sections, each of said sections having a plurality of dynamic four-phased dynamic shift registers, each of said four-phased dynamic shift registers is connected to one of a plurality of buffers, each of said one of a plurality of buffers is connected to a plurality of memory cells, each of said memory cells is connected to one of a plurality of latches, each one of said latches if connected to one of a plurality of high voltage driver circuits, each of said high voltage driver circuits is connected to one of plurality of writing electrodes, each of said writing electrodes writes data onto said medium, including the steps of:
Dependencies are inferred from the claim text.