Electroluminescent device of compound semiconductor with buffer layer
AssigneeSharp Kabushiki Kaisha
InventorsMasahiko Kitagawa, Yoshitaka Tomomura, Kenji Nakanishi
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Abstract
An electroluminescent device of compound semiconductor including a semiconductor substrate, a buffer layer epitaxially grown on the semiconductor substrate and a luminescent layer epitaxially grown on the buffer layer, the substrate being formed from a single crystal of zinc sulfide, zinc selenide or a mixed crystal thereof, the luminescent layer being formed from aluminum nitride, indium nitride, gallium nitride or a mixed crystal of at least two of the nitrides.
Claims5
An electroluminescent device of compound semiconductor comprising a semiconductor substrate, a buffer layer epitaxially grown on said semiconductor substrate and a luminescent layer epitaxially grown on said buffer layer,
- said substrate being formed from a single crystal of zinc sulfide, zinc selenide or a mixed crystal thereof,
- said luminescent layer being formed from aluminum nitride, indium nitride, gallium nitride or a mixed crystal of at least two of said nitrides.
Dependencies are inferred from the claim text.