US 5,236,896 AGranted

Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material

AssigneeSumitomo Electric Industries, Ltd.

InventorsTakao Nakamura, Hiroshi Inada, Michitomo Iiyama

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Abstract

A superconducting device includes a superconducting channel consituted of an oxide superconductor thin film formed on a substrate, a superconductor source electrode and a superconductor drain electrode formed at opposite ends of the superconducting channel, so that a superconducting current can flow through the superconducting channel between the source electrode and the drain electrode. A gate electrode is located through an insulating layer on the superconducting channel so as to control the superconducting current flowing through the superconducting channel. The oxide superconductor thin film of the superconducting channel is formed of a c-axis oriented oxide superconductor crystal, and the oxide superconductor thin film of the superconductor source electrode and the superconductor drain electrode are formed of an a-axis oriented oxide superconductor crystal. The superconducting channel is continuous with the superconductor source electrode and the superconductor drain electrode.

Claims10

Dependent claims

A superconducting device comprising:

a substrate,
a superconducting channel formed of an oxide superconductor thin film formed on said substrate,
a superconductor source electrode and a superconductor drain electrode formed at opposite ends of said superconducting channel, so that a superconducting current can flow through said superconducting channel between said superconductor source electrode and said superconductor drain electrode, and
a gate electrode located through an insulating layer on said superconducting channel so as to control superconducting current flowing through said superconducting channel,
said oxide superconductor thin film of said superconducting channel being formed of a c-axis oriented oxide superconductor crystal, and said oxide superconductor thin film of said superconductor source electrode and said superconductor drain electrode being formed of an a-axis oriented oxide superconductor crystal,
said superconducting channel being in continuity with said superconductor source electrode and said superconductor drain electrode.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application: 07/771,986Filed 8 Oct 1991
Priority: JP 2-2700708 Oct 1990
Granted: 17 Aug 1993
Term ends: Not estimatedThe source records don’t support an estimate.

Classification6 codes

H10N 60/207
Having three or more electrodes, e.g. transistor-like structures: field effect devices
Y10S 505/702
Coated or thin film device, i.e. active or passive: josephson junction present
Y10S 505/703
Coated or thin film device, i.e. active or passive: microelectronic device with superconducting conduction line
Y10S 505/729
Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device: growing single crystal, e.g. epitaxy, bulk