Method for forming quantum dots

A method of forming quantum dots comprising:

• projecting a diffraction image on a fabrication substrate using a thin crystal material membrane and passing a de Broglie wave therethrough;
• selectively forming a mask on a predetermined site of said fabrication substrate using the strength distribution of said diffraction image;
• using said mark to etch said fabrication substrate so that a group of quantum dots are defined.

A method of forming quantum dots comprising:

• forming a diffraction image on a surface of fabrication substrate by passing a de Broglie wave through a thin crystal material membrane;
• using the energy of the de Broglie wave to selectively decompose an organo-metallic compound and induce the epitaxial growth of a plurality of semi conductive chemical compound quantum dot defining layers in accordance with the diffraction strength distribution of the de Broglie wave which occur at predetermined portions of the fabrication substrate surface.

A method of forming quantum dots comprising:

• projecting a diffraction image onto a AlGaAs layer by passing an electron beam through a thin GaAs membrane;
• using the energy of the electron beam, to selectively decompose an organo-metallic compound and induce the epitaxial growth of a plurality of semi conductive chemical compound quantum dot defining layers in accordance with the diffraction strength distribution of the electron beam which occur at predetermined portions of the AlGaAs layer surface.

A method of forming quantum dots comprising:

• forming a diffraction image on a surface of fabrication substrate by passing a de Broglie wave through a thin crystal material membrane while exposing said surface of said fabrication substrate to an etching gas;
• and
• using the energy of the de Broglie wave to selectively etch said fabrication substrate in accordance with the diffraction strength distribution of the de Broglie wave which occur at predetermined portions of the fabrication substrate surface.

A method of forming quantum dots comprising:

• forming a diffraction image on a surface of a GaAs substrate by passing an electron beam through a thin GaAs membrane while exposing said surface of said GaAs substrate to an etching gas;
• and
• using the energy of the electron beam to selectively etch said GaAs substrate in accordance with the diffraction strength distribution of the electron beam which occur at predetermined portions of the GaAs substrate surface.