Slew rate speed-up circuit
AssigneeSamsung Electronics Co., Ltd.
InventorsBang-Won Lee, Kyoung-Un Hwang
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AssigneeSamsung Electronics Co., Ltd.
InventorsBang-Won Lee, Kyoung-Un Hwang
Estimating the term…
In an operational amplifier or a comparator, a slew rate speed-up circuit improving the slew rate, without added power consumption, is disclosed. In a preferred embodiment, an operational amplifier, having one differential amplifier and a first pull-up transistor 10 having a gate connected to an output terminal 23 of the differential amplifier, includes a first output terminal 25, a second pull-up transistor 9 having a gate connected to the output terminal 23 of the differential amplifier and having a channel connected between a power supply voltage terminal and the first output terminal, a second output terminal 26 connected to one end of the channel of the first pull-up transistor 10, a current regulating means 30, connected between the first output terminal and the second output terminal, having one common current path, one pull-up current path and one pull-down current path, a first pull-down transistor 11 having a channel connected between the second output terminal and a ground voltage terminal, and a second pull-down transistor 8 having a channel connected between the first output terminal and the ground voltage terminal.
A circuit for improving a response speed of an output signal with respect to an input signal of an operational amplifier having a differential amplifier and having a first pull-up transistor with a gate connected to an output terminal of said differential amplifier, said circuit comprising:
A circuit for improving a response speed of an output signal with respect to an input signal of an operating amplifier having a differential amplifier, said circuit comprising:
An amplifier circuit for a semiconductor memory device, comprising:
In an operational amplifier having a differential amplifier coupled to respectively receive first and second input signals, a first pull-up transistor with a gate coupled to receive an output of said differential amplifier and a channel interposed between a power voltage and a first output terminal, a second pull-up transistor with a gate coupled to receive the output of said differential amplifier and a channel interposed between the power voltage and a second output terminal, and a first pull-down transistor with a channel interposed between the first output terminal and ground, and a second pull-down transistor with a channel interposed between the second output terminal and ground, a process for improving a slew rate indicative of a response speed of an output signal from the first output terminal via the second output terminal as a function of said first and second input signals received by said differential amplifier by the steps of:
An amplifier circuit for a semiconductor memory device, comprising:
Dependencies are inferred from the claim text.