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US 5,223,724 AGranted
Multiple channel high electron mobility transistor
AssigneeAT&T Bell Laboratories
InventorDonald R. Green, Jr.
Life of this patent
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Abstract
An FET with multiple channels to provide a substantially linear transfer characteristic. The widths and carrier concentrations of the channels, and the depths of the channels below the gate of the FET, are adjusted such that a substantially linear gate voltage-to-output current (drain) transfer characteristic of the FET results. In addition, the electrical characteristics of the FET may be adjusted by changing the spacing of the drain and source diffusions from the gate.
Claims8
A field effect transistor structure formed in a substrate, having:
- source and drain contacts on a major surface of the substrate;
- a plurality of narrow bandgap conduction layers arranged as top to bottom layers, each layer having a thickness, for supporting conductive channels therein, each channel at a different depth below the gate;
- a gate disposed on the top conduction layer and between the source and drain contacts;
- a plurality of wide bandgap donor layers, alternating with the conduction layers, for providing carriers to the channels in the conduction layers;
- and,
- conductive regions in the substrate corresponding to, and in contact with, the source and drain contacts, the regions being spaced from the gate and extending through the plurality of conduction layers and in contact with the plurality of conductive channels therein;
- characterized by the thickness of the conduction layers, the depths of each channel below the gate, and the carrier concentration in the channels being selected to provide well defined pinch-off and saturation voltages and a substantially linear gate input voltage-to-output drain current transfer characteristic over substantially all gate input voltages between pinch-off and channel saturation;
- wherein the thicknesses of conduction layers decreases from the top to the bottom layers.
5 more elements
A field-effect transistor structure formed in a substrate, having:
- source and drain contacts on a major surface of the substrate;
- a plurality of narrow bandgap conduction layers, arranged as top to bottom layers, each layer having a thickness;
- a plurality of conductive channels, each channel disposed a different depth below the gate in the layers of narrow bandgap material,
- a gate disposed on the top narrow bandgap layer and between the source and drain contacts;
- a plurality of donor layers of doped wide bandgap material for providing carriers to the channels;
- and
- conductive regions in the substrate corresponding, and in contact with, the source and drain contacts, the regions being spaced from the gate and extending through the layers to contact the plurality of conductive channels;
- characterized by:
- the gate voltage-to-channel current transfer characteristic of each channel being substantially determined by selecting the thickness of the corresponding layers of narrow bandgap material, the depth of the channel below the gate, and the amount of carriers in the conductive channel, such that the sum of the current transfer characteristics for the channels has well defined pinch-off and saturation voltages and is substantially linear over substantially all gate input voltages between pinch-off and channel saturation;
- wherein the thicknesses of the narrow bandgap layers decreases from the top to the bottom layers.
7 more elements
Dependencies are inferred from the claim text.