Electrostatic chucking method
AssigneeKabushiki Kaisha Toshiba
InventorsKei Hattori, Makoto Sekine
Life of this patent
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Abstract
Disclosed is an electrostatic chucking method, comprising the steps of: (a) placing a substrate to be chucked electrostatically on a chucking material containing an electrode; (b) chucking the substrate to the chucking material by supplying a predetermined electrical potential to the electrode in the chucking material; (c) removing the substrate from the chucking material; and (d) eliminating residual charges on the chucking material by sputtering it with a plasma gas for a predetermined period. Further, the plasma gas may be capable of etching the chucking material.
Claims4
An electrostatic chucking method, comprising the steps of:
- (a) placing a substrate to be chucked electrostatically on a chucking material containing an electrode therein;
- (b) chucking the substrate to the chucking material by supplying a predetermined electrical potential to the electrode in the chucking material;
- (c) removing the substrate from the chucking material;
- and
- (d) eliminating residual charges on the chucking material by sputtering it with a plasma gas for a predetermined period.
An electrostatic chucking method, comprising the steps of:
- (a) placing a substrate to be chucked on a chucking material containing an electrode therein;
- (b) chucking the substrate to the chucking material by supplying a predetermined electrical potential to the electrode in the chucking material;
- (c) removing the substrate from the chucking material;
- and
- (d) eliminating residual charges on the chucking material by sputtering it for a predetermined period with a plasma gas which is capable of etching the chucking material.
Dependencies are inferred from the claim text.