Support table for plate-like body and processing apparatus using the table
AssigneesTokyo Electron Limited, Kabushiki Kaisha Toshiba
InventorsToshihisa Nozawa, Junichi Arami, Isahiro Hasegawa, Haruo Okano
Life of this patent
Estimating the term…
Abstract
A wafer support table is provided in a vacuum chamber of a magnetron plasma etching apparatus. This support table includes a first member having a mechanism for adjusting the temperature of a wafer, a second member having an electrostatic chuck for supporting the wafer on its upper surface, and a gas supply mechanism for supplying a gas between the first and second members.
Claims20
A processing apparatus for performing predetermined processing for an object to be processed in a vacuum atmosphere, comprising:
- a vacuum chamber held at a predetermined vacuum degree;
- a support table provided in said vacuum chamber and including a first member having a mechanism for adjusting a temperature of said object by means of a temperature adjusting medium contained therein, and a second member, for supporting said object, detachably provided on said first member;
- gas supply means for supplying a heat-conduction gas between said first and second members;
- and
- processing means for performing arbitrary processing for said object.
A plasma etching apparatus for dry-etching a semiconductor wafer, comprising:
- a vacuum chamber held at a predetermined vacuum degree;
- a support table provided in said vacuum chamber and including a first member having a mechanism for adjusting a temperature of said wafer by means of a temperature adjusting medium contained therein, and a second member, for supporting said wafer, detachably provided on said first member;
- gas supply means for supplying a heat-conduction gas between said first and second members;
- plasma generating means for generating a plasma for an etching gas around said wafer;
- and
- magnetic field applying means for applying a magnetic field to a region where the plasma is generated.
A support table apparatus for supporting an object to be processed provided in a processing apparatus for processing said object in a vacuum atmosphere, comprising:
- a support table including a first member having a mechanism for adjusting a temperature of said object by means of a temperature adjusting medium contained therein and, a second member, for supporting said object, detachably provided on said first member;
- and
- gas supply means for supplying a heat conduction gas between said first and second members.
A plasma etching apparatus for dry-etching a semiconductor wafer, comprising:
- a vacuum chamber held at a predetermined vacuum degree;
- a support table provided in said vacuum chamber and including a first member having a mechanism for adjusting a temperature by means of a temperature adjusting medium contained therein, and a second member detachably provided on said first member having an electrostatic chuck thereon for holding said object by coulomb force;
- first gas supply means for supplying a heat-conduction gas between said first and second members;
- second gas supply means for supplying a heat-conduction gas between said electrostatic chuck and said wafer;
- and
- plasma generating means for generating a plasma of an etching gas around said wafer.
Dependencies are inferred from the claim text.