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US 5,219,787 AGranted
Trenching techniques for forming channels, vias and components in substrates
AssigneeMicroelectronics and Computer Technology Corporation
InventorsDavid H. Carey, Douglass A. Pietila, David M. Sigmond
Life of this patent
Estimating the term…
Abstract
Trenching techniques for forming a channel partially through and a via completely through the insulating layer of a substrate are disclosed. With additional steps the channel can form an electrically conductive line, an electrode of an integrated capacitor, or an optical waveguide.
Claims33
A method for fabricating a channel and via in the insulating layer of a substrate
- so as to provide an insulating layer on a base with a horizontal channel in the top surface of and partially through the thickness of the insulating layer, and adjacent to the channel a vertical via in the top surface of and completely through the thickness of the insulating layer, comprising the steps of:
- depositing a first mask on a base wherein the first mask contains an opening which defines the region outside the via and exposes a portion of the base,
- depositing a first insulating layer on the first mask and the exposed portion of the base,
- removing the first mask and any of the first insulating layer thereon from the substrate, thereby removing the portion of the first insulating layer in the via and exposing the portion of the base beneath the via,
- depositing a second mask on the first insulating layer and the exposed portion of the base beneath the via wherein the second mask contains an opening which defines the region outside the channel and the via and exposes a portion of the first insulating layer,
- depositing a second insulating layer on the second mask and the exposed portion of the first insulating layer, and
- removing the second mask and any of the second insulating layer thereon from the substrate, thereby removing the portion of the second insulating layer in the channel and the via, exposing the portion of the first insulating layer beneath the channel and exposing and the previously exposed portion of the base beneath the via.
4 more elements
A method for fabricating a via in the insulating layer of a substrate, comprising the steps of:
- depositing a mask on a base of the substrate wherein the mask contains an opening which defines the region outside the via and exposes a portion of the base;
- depositing an insulating layer on the mask and the exposed portion of the base;
- and
- removing the mask and any of the insulating layer thereon from the substrate, thereby removing the portion of the insulating layer in the via and exposing the portion of the base beneath the via.
1 more element
A method for fabricating a channel and via in the insulating layer of a substrate
- so as to provide an insulating layer on a base with a horizontal channel in the top surface of and partially through the thickness of the insulating layer, and adjacent to the channel a vertical via in the top surface of and completely through the thickness of the insulating layer comprising the steps of:
- depositing a first insulating layer on the base;
- providing a first mask over the first insulating layer wherein the first mask defines the via and exposes a portion of the first insulating layer,
- removing the portion of the first insulating layer in the via, thereby exposing the portion of the base beneath the via,
- removing the first mask from the first insulating layer,
- depositing a second mask on the first insulating layer and the exposed portion of the base beneath the via wherein the second mask contains an opening which defines the region outside the channel and the via and exposes a portion of the first insulating layer,
- depositing a second insulating layer on the second mask and the exposed portion of the first insulating layer, and
- removing the second mask and any of the second insulating layer thereon from the substrate, thereby removing the portion of the second insulating layer in the channel and the via, exposing the portion of the first insulating layer beneath the channel and exposing and the previously exposed portion of the base beneath the via.
5 more elements
A method for fabricating a channel and via in the insulating layer of a substrate
- so as to provide an insulating layer on a base with a horizontal channel in the top surface of and partially through the thickness of the insulating layer, and adjacent to the channel a vertical via in the top surface of and completely through the thickness of the insulating layer, comprising the steps of:
- depositing a first mask on a base wherein the first mask contains an opening which defines the region outside the via and exposes a portion of the base,
- depositing a first insulating layer on the fist mask and the exposed portion of the base,
- removing the first mask and any of the first insulating layer thereon from the substrate, thereby removing the portion of the first insulating layer in the via and exposing the portion of the base beneath the via,
- depositing a second insulating a layer on the first insulating layer and the exposed portion of the base,
- providing a second mask over the second insulating layer wherein the second mask defines the channel and the via and exposes a portion of the second insulating layer,
- removing the portion of the second insulating layer in the channel and the via, thereby exposing the portion of the first insulating layer beneath the channel and the previously exposed portion of the base beneath the via, and
- removing the second mask from the second insulating layer.
5 more elements
Dependencies are inferred from the claim text.