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US 5,218,231 AGranted
Mold-type semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorYoshimasa Kudo
Life of this patent
Estimating the term…
Abstract
A semiconductor device comprises a semiconductor element having a PN junction, a first connector having a first connection surface rising in an embossing manner, connected to a first surface of the semiconductor element via a solder layer at the first connection surface, a second connector having a second connection surface rising in an embossing manner, connected to a second surface of the semiconductor element via a solder layer at the second connection surface.
Claims26
A semiconductor device, comprising:
- a first semiconductor element having a PN junction;
- a second semiconductor element having a PN junction;
- and
- a die stage having raised first and second connection surface areas;
- means for forming a difference in level between said die stage and each said first and second connection surface areas, said first and second connection surface areas each being located on opposite sides of said die stage, and said difference level forming means including a groove surrounding each said first and second connection surface areas of said die stage;
- and
- a layer of solder connecting each said first and second semiconductor elements respectively to said first and second connection surface areas.
4 more elements
A bridge type diode rectifier apparatus, comprising:
- a first semiconductor element having a PN junction;
- a second semiconductor element having a PN junction;
- a first die stage having raised first and second connection surface areas;
- first means for forming a difference in level between said first die stage and each said first and second connection surface areas, said first and second connection surface areas each being located on opposite sides of said first die stage, and said first difference level forming means including a first groove surrounding each said first and second connection surface areas of said first die stage;
- a first layer of solder connecting each said first and second semiconductor elements respectively to said first and second connection surface areas;
- a third semiconductor element having a PN junction;
- a fourth semiconductor element having a PN junction;
- a second die stage having raised third and fourth connection surface areas;
- second means for forming a difference in level between said second die stage and each said third and fourth connection surface areas, said third and fourth connection surface areas each being located on opposite sides of said second die stage, and said second difference level forming means including a second groove surrounding each said third and fourth connection surface areas of said second die stage;
- a second layer of solder connecting each said third and fourth semiconductor elements respectively to said third and fourth connection surface areas;
- a first connector connected to sides of said first and third semiconductor elements opposite said first and third connection surface areas, respectively;
- and
- a second connector connected to sides of said second and fourth semiconductor elements opposite said second and fourth connection surface areas, respectively;
- whereby said semiconductor elements and said connectors form a diode bridge circuit.
11 more elements
Dependencies are inferred from the claim text.