Method of producing sheets of crystalline material and devices made therefrom
AssigneeMassachusetts Institute of Technology
InventorsCarl O. Bozler, John C. C. Fan, Robert W. McClelland
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Abstract
A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline mate GOVERNMENT SUPPORT Work described herein was supported by the U.S. Air Force.
Claims13
A process for producing a region of single crystal silicon overlying a region of dielectric material comprising the steps of:
- a. forming a region of non-single crystal silicon material which overlies said region of dielectric material and which overlies and is in contact with a region of single crystal silicon;
- and
- b. converting said non-single crystal silicon region into said region of single crystal silicon by heating said non-single crystal silicon region with hear from a source to simultaneously melt the entire non-single crystal material and cooling the melted material to form the region of single crystal silicon.
A process for producing a region of substantially single crystal semiconductor material overlying a region of dielectric material comprising the steps of:
- a. forming a region of non-single crystal semiconductor material which both overlies said region of dielectric material and which is in contact with a region of single crystal semiconductor material;
- and
- b. converting said non-single crystal semiconductor region into substantially single crystal semiconductor material by exposing the non-single crystal semiconductor region to hear from a plurality of heat sources to simultaneously melt the entire region of non-single crystal material and subsequently cooling the melted region to form the substantially single crystal region.
Dependencies are inferred from the claim text.