US 5,216,404 AGranted

SiC thin-film thermistor

AssigneeMatsushita Electric Industrial Co., Ltd.

InventorsTakeshi Nagai, Shuji Itou, Kunihiro Tsuruda

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Abstract

A thin-film thermistor element which has an electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, and a pair of electrode films each including a body portion of large surface area and a generally comb-shaped portion continued outwardly from the body portion. The electrode films are formed by the use of a firing process on the first surface of the substrate with the respective comb-shaped portions thereof confronting with each other. First and second electroconductive films are also formed on respective surrounding wall faces defining the corresponding through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films. A temperature sensitive resistance film is formed by the use of a high frequency sputtering process on the first surface of the substrate so as to overlay the electrode films. A method of making the thermistor element is also disclosed.

Claims12

Dependent claims

A thin-film thermistor which comprises:

an electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, each of said through-holes being delimited by a surrounding wall face;
a pair of electrode films each including a body portion of large surface area and a generally comb-shaped portion continued outwardly from said body portion, said electrode films being formed on the first surface of the substrate with the comb-shaped portion of one of the electrode films confronting with the comb-shaped portion of one of the electrode films confronting with the comb-shaped portion of the other of the electrode films;
first and second electroconductive films formed on the surrounding wall faces of the respective through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films;
a temperature sensitive resistance film formed on the first surface of the substrate so as to overlay the electrode films
first and second fired electroconductive pieces connected electrically with the first and second electroconductive films, respectively;
and
a pair of metallic strips at least partially disposed on said second surface of said substrate and connected electrically with the first and second fired electroconductive pieces, respectively.

4 more elements

A method of manufacturing a SiC thin-film thermistor element, which comprises the steps of:

preparing an electrically insulating substrate having first and second surfaces opposite to each other and also having a pair of through-holes defined therein so as to extend completely across the thickness thereof, each of said through-holes being delimited by a surrounding wall face;
forming a pair of electrode films on the first surface of the substrate by the use of a first firing process, each of said electrode films including a body portion of large surface area and a generally comb-shaped portion continued outwardly from said body portion, said comb-shaped portions of the respective electrode films being positioned so as to confront with each other;
forming first and second electroconductive films on the surrounding wall faces of the respective through-holes in the substrate in electrically connected relationship with the body portions of the associated electrode films by the use of a second firing process;
and
depositing, by the use of a high frequency sputtering process, a SiC film on the first surface of the substrate so as to overlay the electrode films.

2 more elements

Dependencies are inferred from the claim text.