Semiconductor structure for photodetector
AssigneeSumitomo Electric Indsutries, Ltd.
InventorsTakeshi Himoto, Ichiro Tonai
Life of this patent
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Abstract
A photodiode comprises e.g. an n-type semiconductor layer, a p-type semiconductor region selectively formed in a central part from a surface of the n-type semiconductor layer, a dish-like shaped pn-junction therebetween, an annular electrode formed on the p-type region, an electrode formed on the other side of the n-type semiconductor layer, and a dielectric layer deposited on the n-type semiconductor layer for preventing light from attaining to the semiconductor layer by reflecting a dielectric multilayer consisting of two different media having effective thicknesses equal to one fourth of the wavelength of the light.
Claims8
A photodetector comprising:
- a semiconductor layer being one of an n-type and a p-type having two surfaces,
- a semiconductor region being one of a p-type and an n-type, respectively, selectively formed in a central part from one surface of the semiconductor layer,
- a dish-like shaped pn-junction formed between the semiconductor layer and the semiconductor region,
- an annular electrode formed on the semiconductor region,
- a second electrode formed on the other surface of the semiconductor layer, and
- a dielectric layer formed outside of the annular electrode from preventing light from reaching the semiconductor layer by reflecting or absorbing the light.
A photodetector comprising:
- an semiconductor substrate being one of an n+-type and p+-type having, two surfaces,
- an undoped semiconductor layer deposited on one surface of the semiconductor substrate,
- a semiconductor region, being one of a p-type or n-type region respectively, selectively formed in a central part from one surface of the undoped semiconductor layer,
- a dish-like shaped pn-junction formed between the undoped semiconductor layer and the semiconductor region,
- an annular electrode formed on the semiconductor region,
- a second electrode formed on the other surface of the semiconductor substrate, and
- a dielectric layer formed outside of the annular electrode for preventing light from reaching the semiconductor layer by reflecting or absorbing the light.
A photodetector comprising:
- an n.sup.+ -type InP substrate with two surfaces,
- an undoped InP buffer layer deposited on the n.sup.+ -type InP substrate,
- an undoped InGaAs receiving layer deposited on the undoped InP buffer layer,
- an undoped InP window layer,
- a p-type region selectively formed in a central part of the undoped InP window layer and upper half of the InGaAs receiving layer by ion-implantation or diffusion of Zn,
- a dish-like shaped pn-junction formed between the p-type region and the undoped InP window layer and the undoped InGaAs receiving layer,
- an annular electrode formed on the p-type region,
- another electrode formed on the other surface of the n.sup.+ -type InP substrate,
- an antireflection film deposited on the p-type region (3) enclosed by the annular electrode,
- a protective film deposited on the undoped InP window layer outside of the annular electrode, and
- a dielectric layer formed on the protective film for preventing light from reaching the undoped InGaAs receiving layer by reflecting or absorbing the light completely.
Dependencies are inferred from the claim text.