Process for producing a uniform oxide layer on a compound semiconductor substrate

Abstract

An inventive process for producing a semiconductor device has the steps of: putting a compound semiconductor substrate, an element of the substrate elements having a higher vapor pressure in a quartz ampoule, evacuating the ampoule, introducing oxygen gas into the ampoule and then sealing the ampoule; heating the ampoule to produce an oxide layer on the surface of the compound semiconductor substrate; and forming an electrode metal layer on the oxide layer to produce a MOS diode with a low interface trap density or a Schottky diode with a high barrier height and small ideal factor. Thus, the process produces a Schottky diode of a good forward current/voltage characteristic, low reverse current and superior rectification performance and a MESFET of a low dispersion at threshold voltage.

Dependencies are inferred from the claim text.