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US 5,213,628 AGranted
Photovoltaic device
AssigneeSanyo Electric Co., Ltd.
InventorsShigeru Noguchi, Hiroshi Iwata, Keiichi Sano
Life of this patent
Estimating the term…
Abstract
A photovoltaic device includes a monocrystalline or polycrystalline semiconductor layer of one conductivity type, a substantially intrinsic substantially amorphous semiconductor layer having a predetermined thickness small enough to avoid producing carriers therein. The substantially intrinsic, substantially amorphous layer is formed on the one conductivity type semiconductor layer, and a substantially amorphous semiconductor layer of the opposite conductivity type is formed on the intrinsic, semiconductor layer.
Claims6
A photovoltaic device, comprising:
- a light transparent electrode (5), a back electrode (4), and a semiconductor sandwich structure between said electrodes, said semiconductor sandwich structure comprising a first layer of a monocrystalline semiconductor of one conductivity type;
- a second layer of a substantially intrinsic, substantially amorphous semiconductor having a thickness of 250.ANG. or less formed on said first layer;
- and a third layer of a substantially amorphous semiconductor of the opposite conductivity type formed on said second layer to form said sandwich structure, said thickness of 250.ANG. or less being so thin that carrier formation in said second layer is substantially prevented, whereby the photo conversion efficiency is improved.
A photovoltaic device, comprising:
- a light transparent electrode (5), a back electrode (4), and a semiconductor sandwich structure between said electrodes, said semiconductor sandwich structure comprising a first layer of a polycrystalline semiconductor of one conductivity type;
- a second layer of a substantially intrinsic, amorphous semiconductor having a thickness of 350.ANG. or less formed on said first layer;
- and a third layer of an amorphous semiconductor of the opposite conductivity type formed on said second layer to form said sandwich structure, said thickness of 350.ANG. or less being so thin that carrier formation in said second layer is substantially prevented, whereby the photo conversion efficiency is improved.
Dependencies are inferred from the claim text.