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US 5,212,705 AGranted
AlAS Zn-stop diffusion layer in AlGaAs laser diodes
AssigneeEastman Kodak Company
InventorsKeith B. Kahen, Frank T. J. Smith
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Abstract
An AlGaAs-based semiconductor laser diode is disclosed which has a Zn-stop diffusion layer of p-type conductivity deposited on the active layer, having an Al content greater than 85%.
Claims6
An AlGaAs-based semiconductor laser diode comprising:
- (a) a n.sup.+ -GaAs semiconductor substrate;
- (b) a n-AlGaAs cladding layer deposited on the semiconductor substrate;
- (c) an active layer formed on the n-AlGaAs cladding layer;
- (d) a Zn-stop diffusion layer of p-type conductivity deposited on the active layer, having an Al content greater than 85%;
- (e) a p-AlGaAs cladding layer deposited on the Zn-stop diffusion layer, having an Al content between 55 and 75%, where such p-AlGaAs cladding layer has Zn diffused into it;
- (f) a GaAs capping layer deposited on the p-AlGaAs cladding layer where such layer has Zn diffused into it;
- and
- (g) electrically conductive layers, deposited on the substrate and capping layers.
5 more elements
Dependencies are inferred from the claim text.