Ion implantation and surface processing method and apparatus
AssigneeHughes Aircraft Company
InventorsDan M. Goebel, Jesse N. Matossian
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AssigneeHughes Aircraft Company
InventorsDan M. Goebel, Jesse N. Matossian
Estimating the term…
A capacitor is charged to a high potential or voltage from a power source. A plasma switch, preferably a CROSSATRON modulator switch, is periodically closed and opened to discharge the capacitor into an object for implantation with ions from a plasma in a plasma source ion implantation apparatus. The periodic discharge results in the application of high voltage negative pulses to the object, causing ions from the plasma to be accelerated toward, and implanted into the object. A pulse transformer is preferably provided between the plasma switch and capacitor, and the object to step up the voltage of the pulses and enable the plasma switch to operate at lower voltage levels. The plasma switch enables high duty factor and power operation, and may be combined with arc detection and suppression circuitry to prevent arcing between the object and plasma. A second power source, capacitor, and plasma switch may be provided to apply positive pulses to the object in alternation with the negative pulses to cause generation of the plasma, or to accelerate electrons into the object for performing thermally assisted ion implantation, surface annealing, and the like.
An ion implantation apparatus comprising:
A pulse modulator for applying electrical pulses to an object for implantation with ions from a plasma in a plasma source ion implantation apparatus, comprising:
A bipolar pulse modulator for individually applying electric pulses to an object for implantation with ions or for surface processing with electrons from a plasma in a plasma source ion implantation apparatus, comprising:
A bipolar pulse modulator for individually applying electric pulses to an object for implantation with ions or for surface processing with electrons for a plasma in a plasma source ion implantation apparatus, comprising:
A method of applying electrical pulses to an object for surface processing with electrons or implantation with ions from a plasma in a plasma source ion implantation apparatus, comprising:
An ion implantation apparatus comprising:
Dependencies are inferred from the claim text.