Semiconductor device having a vertical channel of carriers
AssigneeFujitsu Limited
InventorYuji Awano
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AssigneeFujitsu Limited
InventorYuji Awano
Estimating the term…
A semiconductor device comprises a substrate having a stepped upper major surface, an emitter layer of a semiconductor material provided on the stepped upper major surface of the substrate and having a corresponding stepped upper major surface, a base layer provided on stepped upper major surface of the emitter layer and comprising a plurality of channels of carriers and a plurality of control regions for controlling the passage of carriers through the control regions, and a collector layer of a semiconductor material provided on the base layer for collecting the carriers that have passed through the channels. Each channel extends from the emitter layer to the collector layer, and at least one channel and one control region are provided adjacent with each other in correspondence to each step of the upper major surface of the emitter layer.
A semiconductor device, comprising:
Dependencies are inferred from the claim text.