Oxide superconducting lead for interconnecting device component with a semiconductor substrate via at least one buffer layer
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei Yamazaki
Life of this patent
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Abstract
A superconducting device comprises a substrate having an electric connecting section and a copper oxide superconducting material thereon, and an electric interconnecting means for the electric connecting section and the superconducting material formed from a first member selected from the group of copper, gold, platinum and materials including copper, gold, and platinum as a main component and tightly attached to the superconducting material, and/or a second member selected from the group of a heat resistant metal material and its compound with the first member and the substrate material and tightly attached to the first member and the substrate.
Claims18
An electronic device comprising:
- a substrate comprising a silicon containing material;
- at least one device component formed on or in said substrate;
- and
- a lead formed on or in said substrate, which comprises an oxide superconducting material and electrically contacts with said device component, wherein a buffer layer comprising a refractory material is interposed between said lead and said device component.
An electronic device comprising:
- a substrate comprising a semiconductor material;
- at least one device component formed on or in said substrate;
- and
- a lead formed on or in said substrate, which comprises an oxide superconducting material and electrically contacts with said device component, wherein first and second buffer layers are interposed between said lead and device component, wherein said first layer is in an ohmic contact with said lead and said second layer blocks materials diffusing from said lead or first layer to said device component and wherein said second layer comprises a refractory material selected from the group consisting of silicon compound of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and chromium (Cr).
A superconducting device comprising a substrate consisting of a material and having an electric connecting section and a copper oxide superconducting material thereon, and an electric interconnecting means for the electric connecting section and the superconducting material, the electric interconnecting means formed in a multilayer structure of one first member selected from the group of copper, gold, platinum and materials including copper, gold and platinum as a main component, the first member directly attached to the superconducting material, one second member made of a heat resistant material selected from the group of compounds of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and chromium (Cr) with the substrate material and the second member directly attached to the first member and the substrate.
A superconducting device comprising a semiconductor substrate having a plurality of semiconductor elements with an electrode section provided thereon and input and output terminals for an external electric signal and the electrode section of the semiconductor elements, and electric connecting means between the electrode and the input and output terminals made of the semiconductor elements, and electric connecting means between the electrode and the input and output terminals made of an oxide superconducting material, wherein the electrode section is comprised of one member selected from the group of compounds of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), and chromium (Cr) with the substrate material and directly connected to the semiconductor, and a material selected from one group of copper, gold, platinum, and materials including copper, gold, platinum as a main component and directly connected to the one member, and the oxide superconducting material directly attached to the material.
An electronic device comprising:
- a semiconductor substrate having a semiconductor device associated therewith;
- and
- an oxide superconducting lead formed with respect to said substrate, said lead connected to a semiconductor material of said semiconductor device through a buffer layer.
- wherein said buffer layer includes a first layer in contact with said superconducting lead, said first layer comprising a material which is capable of making an ohmic contact with said superconducting lead without being oxidized by said oxide superconducting lead, and a second layer in contact with said semiconductor material, said second layer comprising a metal compound which is capable of preventing the material of said first layer from diffusing into said semiconductor material.
A superconducting device comprising a substrate consisting of a material and having an electric connecting section and a copper oxide superconducting material thereon, and an electric interconnecting means for the electric connecting section and the superconducting material, the electric interconnecting means formed by one member made of a heat resistant material selected from the group of tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), chromium (Cr), and compounds thereof with the substrate material and the electric interconnecting means directly attached to the superconducting material and the substrate.
Dependencies are inferred from the claim text.