Substitutional carbon in silicon
AssigneeThe Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom
InventorsLeigh T. Canham, Keith G. Barraclough, Mark R. Dyball
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Abstract
The invention provides a method of producing silicon with about 100% substitutionality of very high concentrations of carbon up to about 10.sup.21 cm.sup.-3, which has good quality recrystallized layers containing low levels of residual damage, and which avoids precipitation of mobile carbon. This method, compatible with current state-of-the-art VLSI silicon technology, comprises the sequential steps of: implanting a silicon wafer with carbon ions, and two step annealing of the implanted silicon wafer.
Claims15
A method of incorporating substitutional carbon comprising the sequential steps of:
- implanting a silicon wafer with C.sup.+ ions, and
- two step annealing of the implanted silicon wafer comprising first furnace annealing at a temperature within the range 500.degree. C. to 700.degree. C. for a time between about 30 minutes and 2 hours and thereafter annealing at a temperature within the range of 900.degree. C. to 1200.degree. C. for a time between about 1 and 30 seconds.
Dependencies are inferred from the claim text.