Photoresist composition comprising a non-aromatic resin having no aromatic structures derived from units of an aliphatic cyclic hydrocarbon and units of maleic anhydride and/or maleimide and a photosensitive agent

A photoresist composition for far ultraviolet or excimer laser lithography, which comprises in admixture:

• a non-aromatic resin having no aromatic structure, soluble in an aqueous alkaline solution, having units of an aliphatic cyclic hydrocarbon main frame and units derived from maleic anhydride and/or units derived from a maleimide;
• and
• a photosensitive agent selected from the group consisting of a naphthoquinone diazide type positive photosensitive agent, a bis-azide type negative photosensitive agent and a diazo type positive photosensitive agent in a sufficient amount to promote or hinder the solubility of said resin in an aqueous alkaline solution upon exposure to active radiation so as to create a substantial difference in the solubility as between an exposed portion and a non-exposed portion and to form a positive or negative image by subsequent development with an aqueous alkaline solution.