Method and apparatus for forming refractory metal films
AssigneeKabushiki Kaisha Toshiba
InventorsIwao Kunishima, Hitoshi Itoh
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Abstract
A method for improving the adhesion between a refractory metal film and a silicon substrate is disclosed, which comprises depositing the refractory metal film on the silicon substrate at a first temperature; and heating the contact surface between the deposited film and the silicon surface at a second temperature between 300.degree. and 600.degree. C., wherein the depositing and heating steps are performed in a single reaction furnace and the temperature between the depositing and heating steps does not drop below about 300.degree. C.
Claims22
A method of adhering a refractory metal film to a silicon semiconductor surface, comprising the steps of:
- forming an insulating film on a silicon semiconductor substrate;
- forming a contact hole through said insulating film to expose a surface of said silicon semiconductor substrate;
- selectively depositing a refractory metal film on the exposed silicon semiconductor surface at a first temperature by selective chemical vapor deposition;
- and
- heating the contact surface between the deposited film and the substrate, after the completion of the depositing step, at a second temperature, higher than said first temperature, to improve the adhesion of the refractory metal film to the silicon semiconductor surface, said second temperature being between about 300.degree. C. and 600.degree. C., wherein the depositing and heating steps are performed in a single reaction furnace and the temperature between the depositing and heating steps does not drop below about 300.degree. C.
A method of adhering a refractory metal film to a silicon semiconductor surface, comprising the steps of:
- depositing a refractory metal film on a silicon semiconductor surface at a first temperature;
- and
- heating the contact surface between the deposited film and the silicon semiconductor surface, after the completion of the depositing step, at a second temperature between 300.degree. and 600.degree. C. to improve the adhesion of the refractory metal film to the surface, wherein the depositing and heating steps are performed in a single reaction furnace and the temperature between the depositing and heating steps does not drop below about 300.degree. C.
A method of adhering a refractory metal film to a silicon semiconductor surface, comprising the steps of:
- depositing a refractory metal film on a silicon semiconductor surface at a first temperature;
- and
- heating the contact surface between the deposited film and the silicon semiconductor surface, after the completion of the depositing step, at a second temperature between 500.degree. and 550.degree. C. to improve the adhesion of the refractory metal film to the surface, wherein the depositing and heating steps are performed in a single reaction furnace and the temperature does not drop below about 300.degree. C. between the depositing and heating steps.
A method of adhering a refractory metal film to a silicon semiconductor surface, comprising the steps of:
- depositing a refractory metal film on a silicon semiconductor surface at a first temperature;
- and
- heating the contact surface between the deposited film and the silicon semiconductor surface, after the completion of the depositing step, at a second temperature between 300.degree. and 600.degree. C. to improve the adhesion of the refractory metal film to the surface, wherein the depositing and heating steps are performed in a single reaction furnace and the temperature does not drop below about 300.degree. C. between the depositing and heating steps.
A method of adhering a refractory metal film to a silicon semiconductor surface, comprising the steps of:
- forming an insulating film on a silicon semiconductor substrate;
- forming a contact hole through said insulating film to expose a surface of said silicon semiconductor substrate;
- selectively depositing a tungsten film in said contact hole to make electrical contact with the exposed silicon semiconductor surface at a first temperature by selective chemical vapor deposition with a reactive gas comprising WF.sub.6 ;
- and
- heating the contact surface between the deposited film and the silicon semiconductor surface, after the completion of the depositing step, at a second temperature between 300.degree. and 600.degree. C. to improve the direct adhesion of the tungsten film to the surface, wherein the depositing and heating steps are performed in a single reaction furnace and the temperature between the depositing and heating steps does not drop below about 300.degree. C.
Dependencies are inferred from the claim text.