Plasma processing apparatus and the method of the same
AssigneeHitachi, Ltd.
InventorsKatsuaki Saito, Takuya Fukuda, Michio Ohue, Tadasi Sonobe
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AssigneeHitachi, Ltd.
InventorsKatsuaki Saito, Takuya Fukuda, Michio Ohue, Tadasi Sonobe
Estimating the term…
A plasma processing apparatus performs a sample processing and cleaning processing. The sample processing is carried out by generating a reaction gas plasma within a vacuum vessel of the apparatus using an electron cyclotron resonance excitation. The cleaning processing is carried out to clean the inner wall of the vacuum vessel by generating a cleaning gas plasma within the vacuum vessel. Generation of the cleaning gas plasma takes place by using either one of the following processes: (1) The plasma diameter during the cleaning processing is made larger than that during the sample processing. The end of the plasma during cleaning processing is made to reach the inside wall of the vacuum vessel. (2) The cleaning gas plasma is scanned within the vacuum vessel.
A plasma processing apparatus which carries out a sample processing by generating a reaction gas plasma within a vacuum vessel using an electron cyclotron resonance excitation and a cleaning processing of an inner wall of the vacuum vessel by generating a cleaning gas plasma within the vacuum vessel, comprising:
A plasma processing apparatus which carries out a sample processing by generating a reaction gas plasma within a vacuum vessel using an electron cyclotron resonance excitation and a cleaning processing of an inner wall of the vacuum vessel by generating a cleaning gas plasma within the vacuum vessel, comprising:
A plasma processing apparatus which carries out a sample processing by generating a reaction gas plasma within a vacuum vessel using an electron cyclotron resonance excitation and a cleaning processing of an inner wall of the vacuum vessel by generating a cleaning gas plasma within the vacuum vessel, comprising:
A plasma processing method which carries out a sample processing by generating a reaction gas plasma within a vacuum vessel using an electron cyclotron resonance excitation and a cleaning processing of an inner wall of the vacuum vessel by generating a cleaning gas plasma within the vacuum vessel, wherein a maximum plasma diameter of a surface which is parallel to the sample surface during a cleaning procedure is larger than the maximum plasma diameter of the surface which is parallel to the sample surface during sample processing, and the end of the maximum plasma diameter during the cleaning procedure reaches to an inner wall of said vacuum vessel.
Dependencies are inferred from the claim text.