Titanium-tungsten etching solutions
AssigneeMicroelectronics and Computer Technology Corporation
InventorIan Y. K. Yee
Life of this patent
Estimating the term…
Abstract
Etchant solutions for titanium-tungsten, which include at least one oxidizing agent and at least one fluoride salt. Also disclosed is a method for etching TiW utilizing these etchants.
Claims23
A method for etching TiW, comprising the steps of applying an etchant solution to TiW, wherein said solution comprises at least one oxidizing agent and at least one fluoride salt, and buffering the solution to maintain a pH in the range of approximately 7 to 9.
A method for etching TiW, comprising the step of applying an etching solution to TiW, wherein said solution comprises potassium ferricyanide and a fluoride salt.
An etchant for etching titanium-tungsten mixtures and alloys and layered combinations of same, comprising potassium ferricyanide and a fluoride salt.
An etchant for etching titanium-tungsten mixtures and alloys and layered combinations of same, comprising ammonium persulfate, ammonium fluoride and ammonium hydroxide.
An etchant for etching titanium-tungsten mixtures and alloys and layered combinations of same, comprising potassium ferricyanide, potassium hydroxide, potassium phosphate monobasic and ammonium fluoride.
An etchant for etching titanium-tungsten mixtures and alloys and layered combinations of same, comprising an oxidizing agent, a fluoride salt, and a buffering agent to maintain a pH in the range of approximately 7 to 9.
Dependencies are inferred from the claim text.