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US 5,211,796 AGranted
Apparatus for performing in-situ etch of CVD chamber
AssigneeLST Logic Corporation
InventorKeith J. Hansen
Life of this patent
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Abstract
Walls of a CVD chamber are automatically controlled to be heated to above 65.degree. C. during etching of the chamber walls with NF.sub.3. Any condensation of reaction products on the chamber walls is avoided, since, at the relatively high chamber wall temperature, these reaction products are volatile and are purged away with the NF.sub.3. The apparatus is programmed to automatically carry out this heating and gas injecting process.
Claims3
An apparatus for performing an in-situ etch of a CVD chamber in a cold-wall type processing system for cleaning said chamber, said apparatus comprising:
- a closed loop heating unit for heating walls of said chamber in said cold-wall processing system to a temperature between approximately 65.degree. C. and approximately 90.degree. C.;
- means for injecting a fluorine-based etching gas into said chamber;
- and
- means for controlling said means for heating and said means for injecting so that in-situ etching of said chamber is conducted at between approximately 65.degree. C. and approximately 90.degree. C.
1 more element
Dependencies are inferred from the claim text.