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US 5,211,761 AGranted
Photovoltaic device and manufacturing method thereof
AssigneeSanyo Electric Co., Ltd.
InventorsShigeru Noguchi, Hiroshi Iwata, Keiichi Sano
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Abstract
A photovoltaic device according to the present invention has a buffer layer on a heat-resistant substrate for enhancing the adhesion characteristic of the substrate, a first semiconductor thin film including polycrystalline silicon of one conductivity type formed by a liquid phase growth method, and a second semiconductor thin film of opposite conductivity type, formed in this order.
Claims11
A photovoltaic device, comprising:
- a heat resistant substrate;
- an adhesion improving layer formed on said substrate for enhancing the adhesion characteristic and wettability of the substrate;
- a first semiconductor thin film comprising polycrystalline silicon of one conductivity type formed on said adhesion improving layer by a liquid phase growth method;
- a second semiconductor thin film of opposite conductivity type formed on said first semiconductor thin film, and wherein said adhesion improving layer is formed in a configuration such that said adhesion improving layer exposes scattered portions of the surface of said substrate, said adhesion improving layer being formed of a material selected from the group consisting of silicon, silicide, cermet, and silicon carbide.
1 more element
A method of manufacturing a photovoltaic device, comprising the following steps:
- forming on a heat-resistant substrate an adhesion improving layer made of a material selected from the group consisting of silicon, silicide, cermet, and silicon carbide for enhancing the adhesion characteristic and wettability of said substrate, said forming step being performed so that said adhesion improving layer is configured for exposing scattered portions of said substrate;
- forming a first semiconductor thin film including polycrystalline silicon of one conductivity type on said adhesion improving layer by a liquid phase growth method;
- and forming a second semiconductor thin film of opposite conductivity type on said first semiconductor thin film.
Dependencies are inferred from the claim text.