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US 5,211,758 AGranted
Chemical vapor deposition apparatus
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorYoichiro Ota
Life of this patent
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Abstract
A chemical vapor deposition apparatus having a gas purifier for purifying a raw-material gas such as AsH.sub.3 or PH.sub.3 gas, the gas purifier being constructed as the combination of an organometal and a molecular sieve. Gas of AsH.sub.3, PH.sub.3 or the like is introduced into the organometal whereby impurities such as H.sub.2 O or O.sub.2 contained in the raw-material gas (AsH.sub.3, PH.sub.3, etc) are removed. Further, organometal vapor occured from gas purifier is removed by the molecular sieve.
Claims4
A chemical vapor deposition apparatus comprising:
- means for supplying raw-material gas;
- means for purifying the raw-material gas supplied from the raw-material gas supplying means, the raw-material gas purifying means having an organometal through which the raw-material gas is passed, and a molecular sieve through which the raw-material gas passed through said organometal is sieved;
- a reactor in which the raw-material gas purified by the purifying means undergoes reaction so that a crystal of the product of said reaction is grown;
- and
- exhausting means for exhausting the gases remaining in said reactor after a reaction process.
2 more elements
Dependencies are inferred from the claim text.