Semiconductor laser

Abstract

A semiconductor laser includes a first conductivity type semiconductor substrate; a first conductivity type semiconductor first cladding layer disposed on the substrate; a semiconductor active layer disposed on the first cladding layer; a second conductivity type semiconductor second cladding layer disposed on the active layer; a current concentration and collection structure for confining current flow to part of the active layer including a second conductivity type ridge structure disposed on the second cladding layer, a first conductivity type semiconductor current blocking layer disposed directly on the second cladding layer and adjacent to and contacting the ridge structure, the ridge structure including a semiconductor etch stopping layer different in composition from and disposed on the second cladding layer and a second conductivity type semiconductor third cladding layer disposed on and different in composition from the etch stopping layer, and a second conductivity type semiconductor transition layer; a second conductivity type semiconductor contacting layer contacting the current concentration and collection structure; and first and second electrodes respectively disposed on the substrate and the contacting layer.

Dependencies are inferred from the claim text.