Electron beam exposure data processing method, electron beam exposure method and apparatus

An electron beam exposure data processing method comprising the steps of:

• a) inputting exposure data relating to a pattern to be written, a plurality of ranges of dimensions of pattern being predetermined;
• b) determining which one of the ranges of dimensions said pattern belongs;
• c) providing a plurality of processing modes equal in number to the plurality of ranges of dimensions, each of the plurality of processing modes defining a framing process by which said pattern is partitioned into 1) a frame pattern and 2) an inner pattern surrounded by said frame pattern;
• d) selecting one of said process modes which correspond to one of the ranges to which said pattern to be written belongs;
• e) reducing said inner pattern by a reduction rate while not reducing said frame pattern, the reduction rate is increased with an increase in dimensions of said pattern;
• f) exposing said frame pattern to a first exposure dose;
• and
• g) exposing said reduced inner pattern to a second exposure dose which is less than said first exposure dose.

An electron beam exposure method comprising the steps of:

• a) inputting exposure data relating to a pattern to be written;
• b) determining whether or not said pattern should be subjected to a framing process;
• c) performing said framing process when it is determined that said pattern should be subjected to the framing process so that said pattern is partitioned into a frame pattern and an inner frame pattern surrounded by said frame pattern;
• d) reducing said inner pattern by a reduction rate to generate a reduced inner pattern while not reducing said frame pattern, the reduction rate is increased with an increase in dimensions of said pattern;
• e) determining an exposure dose for said frame pattern and an exposure dose for said reduced inner pattern;
• and
• f) projecting an electron beam onto an object to be exposed in accordance with said frame pattern, said reduced inner pattern, said exposure dose for said frame pattern and said exposure dose for said reduced inner pattern.

An electron beam exposure apparatus comprising:

• first means for inputting exposure data relating to a pattern to be written;
• second means operatively coupled to said first means, for determining whether or not said pattern should be subjected to a framing process;
• third means operatively coupled to said first and second means, for performing said framing process when said second means determines that said pattern should be subjected to the framing process so that said pattern is partitioned into a frame pattern and an inner pattern surrounding by said frame pattern;
• fourth means operatively coupled to said first and third means, for reducing said inner pattern by a reduction rate to generate a reduced inner pattern while not reducing said frame pattern, the reduction rate is increased with an increase in dimensions of said pattern;
• fifth means operatively coupled to said first and third means, for determining an exposure dose for said frame pattern and an exposure dose for said reduced inner pattern;
• and
• sixth means operatively coupled to said third, fourth and fifth means, for projecting an electron beam onto an object to be exposed in accordance with said frame pattern, said reduced inner pattern, said exposure dose for said frame pattern and said exposure dose for said reduced inner pattern.

An electron beam exposure apparatus comprising:

• first means for inputting exposure data relating to a pattern to be written, a plurality of ranges of dimensions of pattern being predetermined;
• means operatively coupled to said first means, for determining which one of the ranges of dimensions said pattern belongs, said means providing a plurality of processing modes equal in number to the plurality of ranges of dimensions, each of the plurality of processing modes defining a framing process by which said pattern is partitioned into a) a frame pattern and b) an inner pattern surrounded by said frame pattern, said means reducing said inner pattern by a reduction rate while not reducing said frame pattern, the reduction rate is increased with an increase in dimensions of said pattern, said means exposing said frame pattern to a first exposure dose, and exposing said reduced inner pattern to a second exposure dose, said second exposure dose being less than said first exposure dose;
• and
• third means operatively connected to said second means, for selecting one of said processing modes which correspond to one of the ranges to which said pattern belongs.