US 5,210,487 A · Double-gated integrating scheme for electron beam tester

Abstract

A surface is probed with a pulsed electron beam and secondary electrons are detected to produce a detector signal. First portions of the detector signal are substantially dependent on the voltage of the surface being probed, while second portions of the detector signal are substantially independent of the voltage of the surface being probed. In general, the first and second portions of the detector signal include unwanted noise caused by low-level sampling due to beam leakage and/or by scintillator afterglow in the secondary-electron detector. The detector signal is sampled during the first signal portions and is sampled during the second signal portions. The sampled first signal portions are combined with the complement of the sampled second signal portions to produce a measured voltage signal representing voltage of the conductor. In a preferred sampling scheme, alternate electron-beam sampling pulses are held-off. A first gate samples the secondary-electron detector signal when sampling pulses are not held off. A second gate samples the secondary-electron detector signal when sampling pulses are held off, and these samples are inverted. The samples from the first gate are combined with the inverted samples from the second gate to substantially cancel unwanted background noise caused by beam leakage and/or scintillator afterglow after sufficient integration.

Claims16

Dependent claims

Apparatus for measuring voltage of a conductor of an integrated circuit, comprising:

a. exerciser means for exercising an integrated circuit by applying a repetitive signal pattern to the integrated circuit;
b. blanker means for repetitively blanking and unblanking an electron beam synchronously with the repetitive signal pattern to thereby produce electron-beam sampling pulses during periodic first time intervals when the electron beam is unblanked, and wherein blanking of the electron beam is incomplete such that a portion of the electron beam is passed as forward-scattered electrons during periodic second time intervals between the periodic first time intervals;
c. probe means for probing a conductor of the integrated circuit by applying the electron-beam sampling pulses and the forward-scattered electrons to the integrated circuit;
d. detector means for detecting secondary electrons emitted from the integrated circuit to produce a detector signal, the detector signal having periodic first signal portions with levels substantially dependent upon interaction of the electron-beam sampling pulses with said conductor and the detector signal having periodic second signal portions with levels primarily dependent upon interaction of the forward-scattered electrons with said integrated circuit;
e. sampling means for sampling the detector signal during said first signal portions and during said second signal portions;
and
f. combining means for combining the sampled first signal portions with the complement of the sampled second signal portions to produce a measured voltage signal representing voltage of said conductor.

4 more elements

A method of measuring voltage of a conductor of an integrated circuit, comprising:

a. exercising an integrated circuit by applying a repetitive signal pattern to the integrated circuit;
b. repetitively blanking and unblanking an electron beam synchronously with the repetitive signal pattern to thereby produce electron-beam sampling pulses during periodic first time intervals when the electron beam is unblanked, and wherein blanking of the electron beam is incomplete such that a portion of the electron beam is passed as forward-scattered electrons during periodic second time intervals between the periodic first time intervals;
c. probing a conductor of the integrated circuit by applying the electron-beam sampling pulses and the forward-scattered electrons to the integrated circuit;
d. detecting secondary electrons emitted from the integrated circuit to produce a detector signal, the detector signal having periodic first signal portions with levels substantially dependent upon interaction of the electron-beam sampling pulses with said conductor and the detector signal having periodic second signal portions with levels primarily dependent upon interaction of the forward-scattered electrons with said integrated circuit;
e. sampling the detector signal during said first signal portions;
f. sampling the detector signal during said second signal portions;
and
g. combining the sampled first signal portions with the complement of the sampled second signal portions to produce a measured voltage signal representing voltage of said conductor.

5 more elements

A method of acquiring a voltage contrast image of a portion of an integrated circuit and measuring voltage of a conductor of the integrated circuit, comprising:

a. exercising an integrated circuit by applying a repetitive signal pattern to the integrated circuit;
b. generating an electron beam;
c. acquiring a voltage contrast image of a portion of the integrated circuit by
i. scanning said electron beam over a portion of the integrated circuit during repetitive image-acquisition time intervals,
ii. employing an electron detector having a scintillator and a photomultiplier to detect secondary electrons emitted from the integrated circuit during said repetitive image-acquisition time intervals to produce an image signal, said scintillator exhibiting time-decaying after-glow following each of said image-acquisition time intervals, and
iii. generating a voltage contrast image from said image signal;
and measuring voltage of a conductor of the integrated circuit by
i. repetitively blanking and unblanking the electron beam synchronously with the signal pattern during repetitive waveform-acquisition time intervals to thereby produce electron-beam sampling pulses when the electron beam is unblanked, said waveform-acquisition time intervals alternating with said image-acquisition time intervals,
ii. probing said conductor by applying the electron-beam sampling pulses to said conductor during said waveform-acquisition time intervals,
iii. employing said electron detector to detect secondary electrons emitted from the integrated circuit during said waveform-acquisition time intervals to produce a detector signal, the detector signal having periodic first signals portions with levels substantially dependent upon interaction of the electron-beam sampling pulses with said conductor and the detector signal having periodic second signal portions with levels substantially independent of interaction of the electron-beam sampling pulses with said conductor, and the detector signal having a time-decaying distortion component due to the after-glow exhibited by the scintillator following each said image-acquisition time interval,
iv. sampling the detector signal during said first signal portions,
v. sampling the detector signal during said second signal portions, and
vi. combining the sampled first signal portions with the complement of the sampled second signal portions to produce a measured voltage signal representing voltage of said conductor, such that said measured voltage signal is substantially free of distortion due to the after-glow exhibited by the scintillator following each said image-acquisition time interval.

10 more elements

Apparatus for acquiring a voltage contrast image of a portion of an integrated circuit and measuring voltage of a conductor of the integrated circuit, comprising:

a. means for exercising an integrated circuit by applying a repetitive signal pattern to the integrated circuit;
b. means for generating an electron beam;
c. means for acquiring a voltage contrast image of a portion of the integrated circuit, comprising
i. means for scanning the electron beam over a portion of the integrated circuit during repetitive image-acquisition time intervals,
ii. an electron detector having a scintillator and a photomultiplier for detecting secondary electrons emitted from the integrated circuit during said repetitive image-acquisition time intervals to produce an image signal, said scintillator exhibiting time-decaying after-glow following each of said image-acquisition time intervals, and
iii. means for generating a voltage contrast image from said image signal;
and
d. means for measuring voltage of a conductor of the integrated circuit, comprising
i. means for repetitively blanking and unblanking the electron beam synchronously with the signal pattern during repetitive waveform-acquisition time intervals to thereby produce electron-beam sampling pulses when the electron beam is unblanked, said waveform-acquisition time intervals alternating with said image-acquisition time intervals,
ii. means for probing the conductor by applying the electron-beam sampling pulses to the conductor during said repetitive waveform-acquisition time intervals,
iii. means comprising said electron detector for detecting secondary electrons emitted from the integrated circuit during said waveform-acquisition time intervals to produce a detector signal, the detector signal having periodic first signal portions with levels substantially dependent upon interaction of the electron-beam sampling pulses with the conductor and the detector signal having periodic second signal portions with levels substantially independent of interaction of the electron-beam sampling pulses with the conductor, and the detector signal having a time-decaying distortion component due to the after-glow exhibited by the scintillator following each said image-acquisition time interval,
iv. means for sampling the detector signal during said first signal portions
and for sampling the detector signal during said second signal portions, and
v. means for combining the sampled first signal portions with the complement of the sampled second signal portions to produce a measured voltage signal representing voltage of said conductor, such that said measured voltage signal is substantially free of distortion due to the after-glow exhibited by the scintillator following each said image-acquisition time interval.

11 more elements

A method of acquiring a voltage contrast image of a portion of an integrated circuit and measuring voltage of a conductor of the integrated circuit, comprising;

a. exercising an integrated circuit by applying a repetitive signal pattern to the integrated circuit;
b. generating an electron beam;
c. acquiring a voltage contrast image of a portion of the integrated circuit by
i. scanning said electron beam over a portion of the integrated circuit during repetitive image-acquisition time intervals,
ii. employing an electron detector having a scintillator and a photomultiplier to detect secondary electrons emitted from the integrated circuit during said repetitive image-acquisition time intervals to produce an image signal, said scintillator exhibiting after-glow following each said image-acquisition time interval, and
iii. generating a voltage contrast image from said image signal;
and
d. measuring voltage of a conductor of the integrated circuit by
i. repetitively blanking and unblanking the electron beam synchronously with the signal pattern during repetitive waveform-acquisition time intervals to thereby produce electron-beam sampling pulses during periodic first time intervals within each waveform-acquisition time interval when the electron beam is unblanked, and wherein blanking of the electron beam is incomplete such that a portion of the electron beam is passed as forward-scattered electrons during periodic second time intervals within each waveform-acquisition time interval, said second time intervals alternating with said first time intervals, and said waveform-acquisition time intervals alternating with said image-acquisition time intervals,
ii. probing said conductor by applying the electron-beam sampling pulses and the forward-scattered electrons to said conductor during said waveform-acquisition time intervals,
iii. employing said electron detector to detect secondary electrons emitted from the integrated circuit during said waveform-acquisition time intervals to produce a probe signal, the probe signal having
a. periodic first signal portions with a signal component substantially dependent upon interaction of the electron-beam sampling pulses with said conductor,
b. periodic second signal portions with a signal component substantially dependent upon interaction of the forward-scattered electrons with said conductor, and
c. a time-decaying distortion component due to the after-glow exhibited by the scintillator following each said image-acquisition time interval,
iv. sampling the probe signal during said first signal portions,
v. sampling the probe signal during said second signal portions, and
vi. combining the sampled first signal portions with the complement of the sampled second signal portions to produce a measured voltage signal representing voltage of said conductor, such that said measured voltage signal is substantially free of distortion due to the after-glow exhibited by the scintillator following each said image-acquisition time interval.

14 more elements

Apparatus for acquiring a voltage contrast image of a portion of an integrated circuit and measuring voltage of a conductor of the integrated circuit, comprising:

a. a circuit exerciser for exercising an integrated circuit by applying a repetitive signal pattern to the integrated circuit;
b. an electron source for generating an electron beam;
c. a beam blanker for
i. unblanking the beam during repetitive image-acquisition time intervals and
ii. repetitively blanking and unblanking the electron beam synchronously with the signal pattern during repetitive waveform-acquisition time intervals to thereby produce electron-beam sampling pulses during periodic first time intervals within each waveform-acquisition time interval when the electron beam is unblanked, the beam blanker providing for incomplete blanking of the electron beam such that a portion of the electron beam is passed as forward-scattered electrons during periodic second time intervals within each waveform-acquisition time interval, said second time intervals alternating with said first time intervals, and said waveform-acquisition time intervals alternating with said image-acquisition time intervals;
d. an electron optical column for
i. scanning said electron beam over a portion of the integrated circuit during said image-acquisition time intervals, and
ii. probing said conductor by applying the electron-beam sampling pulses and the forward-scattered electrons to said conductor during said waveform-acquisition time intervals,
e. an electron detector comprising a scintillator and a photomultiplier for
i. detecting secondary electrons emitted from the integrated circuit during said image-acquisition time intervals and producing an image signal, said scintillator exhibiting after-glow following each said image-acquisition time interval, and
ii. detecting secondary electrons emitted from the integrated circuit during said waveform-acquisition time intervals to produce a probe signal, the probe signal having
a. periodic first signal portions with a signal component substantially dependent upon interaction of the electron-beam sampling pulses with said conductor,
b. periodic second signal portions with a signal component substantially dependent upon interaction of the forward-scattered electrons with said conductor,
c. and a time-decaying distortion component due to the after-glow exhibited by the scintillator following each said image-acquisition time interval;
f. means for generating a voltage contrast image from said image signal;
and
g. means for sampling the probe signal during said first signal portions and during said second signal portions, and
h. means for combining the sampled first signal portions with the complement of the sampled second signal portions to produce a measured voltage signal representing voltage of said conductor, such that said measured voltage signal is substantially free of distortion due to the after-glow exhibited by the scintillator following each said image-acquisition time interval.

15 more elements

Dependencies are inferred from the claim text.

Double-gated integrating scheme for electron beam tester

Life of this patent

Double-gated integrating scheme for electron beam tester

Life of this patent

Abstract

Claims16