VHF/UHF reactor system
AssigneeApplied Materials, Inc.
InventorsKenneth S. Collins, Craig A. Roderick, Chan-Lon Yang, David N. K. Wang, Dan Maydan
Life of this patent
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Abstract
A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.
Claims17
A plasma processing reactor comprising:
- a housing having a wall defining a plasma chamber therein;
- wafer supporting cylindrical electrode means within the plasma chamber defining a wafer support position;
- a gas inlet manifold positioned in the housing for supplying reactant gas to the plasma chamber;
- vacuum pumping means;
- and
- an integral transmission line structure adapted to apply ac energy of selected frequency from an external source to the plasma chamber and comprising (1) the cylindrical electrode means;
- (2) an outer conductor surrounding the cylindrical electrode means;
- (3) means electrically connecting the outer conductor to the plasma chamber wall;
- and (4) an insulator between the cylindrical electrode means and the outer conductor, such that ac energy applied to the transmission line structure is coupled in the manner of a co-axial cable along the cylindrical electrode means to the plasma chamber and from the plasma chamber to the outer conductor.
A plasma processing reactor, comprising:
- a chamber;
- an electrode within said chamber, said electrode having a center conductor that provides a first reversible path for coupling high frequency AC energy from an energy source to a plasma within said chamber, a coaxial concentric outer conductor which provides a second reversible path for coupling the high frequency AC energy from the energy source to a plasma within said chamber, and a coaxial concentric dielectric interposed between said center conductor and said outer conductor, said electrode having a characteristic transmission impedance substantially corresponding to a chamber load impedance.
Dependencies are inferred from the claim text.