Word decoder with SBD-T.sub.x clamp

Abstract

An anti-saturation clamp for a word decoder utilizes a Schottky Barrier Diode (SBD) S.sub.x in combination with a transistor T.sub.x. The transistor T.sub.x is in circuit with a switching transistor T and diverts the majority of pull down current from the switching transistor. The saturation capacitance of the transistor T is negligible even at high temperature operation, and the transistor T does not operate in saturation. The SBD clamp S.sub.x is in circuit between transistors T.sub.x and T, and can be significantly smaller than a conventional SBD clamp since the clamp current is amplified by transistor T.sub.x. The improved anti-saturation clamp eliminates delay otherwise resulting from saturation capacitance of the switching transistor and results in a performance gain of about 40% for nominal operations. Also contemplated by the invention are improved word decoder systems per se (those which incorporate the aforementioned anti-saturation clamp), and improved methods for enhancing the performance of word decoder systems to, for example, support advanced computing applications.

Dependencies are inferred from the claim text.