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US 5,210,043 AGranted
Process for producing semiconductor device
AssigneeSeiko Instruments Inc.
InventorTakashi Hosaka
Life of this patent
Estimating the term…
Abstract
A process for producing a semiconductor device having a structure in which a silicide film is in contact with an impurity diffusion layer inside a semiconductor substrate through a contact hole, in that, after the formation of the silicide film, an element of the same conductivity type as that of the impurity diffusion layer is implanted by ion implantation in the vicinity of the interface between the silicide film and the impurity diffusion layer through the silicide film.
Claims3
A process for producing a semiconductor comprising:
- providing a semiconductor substrate having an exterior surface;
- forming impurity diffusion layers int eh substrate so that the layers extend to the exterior surface;
- forming a film of insulting material on the exterior surface and providing contact holes in the film to expose at least a portion of each impurity diffusion layer;
- forming a thin layer of a material which adheres well to the film of material and to silicide upon the film of insulating material so that the thin layer extends into the contact holes and forms an interface with the impurity diffusion layers;
- and forming a silicide film upon the thin layer so that the silicide film extends into the contact holes;
- and, after said step of forming the silicide film, performing an ion implantation for implanting ions of an impurity element of the same conductivity type as that of said impurity diffusion layers with an implantation energy selected so that the implanted ions have a concentration peak between a location which is 1000.ANG. away from the interface between the thin layer and the silicide film toward the silicide film and a location which is 500 .ANG. away from the interface between the thin layer and the semiconductor substrate toward the semiconductor substrate.
3 more elements
A process for producing a semiconductor comprising:
- providing a semiconductor substrate having an exterior surface;
- forming impurity diffusion layer sin the substrate so that the layers extend to the exterior surface;
- forming a film of insulating material on the exterior surface and providing contact holes in the film to expose at least a portion of each impurity diffusion layer;
- forming a silicide film upon the film of insulating material nd in the contact holes;
- forming a thin layer of material on the silicide film;
- and performing an ion implantation for implanting ions of an impurity element of the same conductivity type as that of said impurity diffusion layers with an implantation energy selected so that the implanted ions have a concentration peak between a location which is 1000 .ANG. away from the interface between the impurity diffusion layer sand the silicide film toward the silicide film and 500 .ANG. away from the interface toward the impurity diffusion layers.
3 more elements
Dependencies are inferred from the claim text.