Use of organometallic compounds to deposit thin films from the gas phase
AssigneeMerck Patent Gesellschaft mit beschraenkter Haftung
InventorsDietrich Erdmann, Ludwig Pohl, Martin Hostalek
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Abstract
The invention relates to the use of organometallic compounds containing, as metals, aluminum, gallium or indium for the deposition of thin films or epitactic layers from the gas phase.
Claims16
In a process for the deposition of epitactic layers employing an organometallic compound for the deposition of thin films or layers form the gas phase, the improvement comprising said organometallic compound being a compound of formula I
- (R.sup.1).sub.3-n M--Y.sub.n I,
- wherein
- M is aluminum, alllium or indium;
- n is 1, 2 or 3;
- Y is --NR.sup.2 R.sup.3, --RP.sup.2 R.sup.3, --ASR.sup.2 R.sup.3 ;
- R.sup.1, R.sup.2, R.sup.4 and R.sup.5, in each case independently of one another, are H, an alkyl group having 1-8 C atoms, where the alkyl group may be partly or fully fluorinated, a cycloalkyl, alkenyl or cycloalkenyl group, in each case having 3-8 C atoms, or an aryl group, R.sup.1 is alternatively 1,2--(CH.sub.2).sub.p --C.sub.6 H.sub.4 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.6 H.sub.10 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.6 H.sub.8 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.6 H.sub.6 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.5 H.sub.8 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.5 H.sub.6 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.5 H.sub.4 --(CH.sub.2).sub.q --Z, or 1,2--(CH.sub.2).sub.p --C.sub.4 H.sub.6 --(CH.sub.2).sub.q --Z;
- p and q, in each case independently of one another, are 0, 1, 2 or 3;
- Z is --NR.sup.4 R.sup.5, --PR.sup.4 R.sup.5, --AsR.sup.4 R.sup.5 or --SbR.sup.4 R.sup.5 ;
- and is a branched alkyl or alkenyl group, in each case having 3-8 C atoms, it being possible for these groups to be partly or fully fluorinated, a cycloalkyl or cycloalkenyl group, in each case having 3,-8 C atoms, or an aryl group.
In a process for the preparation of thin films on substrates by gas-phase deposition from an organometallic compounds, the improvement comprising said organometallic compound being a compound of formula I
- (R.sup.1).sub.3-n M--Y.sub.n I,
- wherein
- M is aluminum, gallium or indium;
- n is 1, 2 or 3;
- is --NR.sup.2 R.sup.3, --PR.sup.2 R.sup.3, --AsR.sup.2 R.sup.3 or --SbR.sup.2 R.sup.3 ;
- R.sup.1, R.sup.2, R.sup.4 and R.sup.5, in each case independently of one another, are H, an alkyl group having 1-8 C atoms, where the alkyl group may be partly or fully fluorinated, a cycloalkyl, alkenyl or cycloalkenyl group, in each case having 3-8 C atoms, or an aryl group, R.sup.1 is alternatively 1,2--(CH.sub.2).sub.p --C.sub.6 H.sub.4 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.6 H.sub.10 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.6 H.sub.8 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.6 H.sub.6 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.5 H.sub.8 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.5 H.sub.6 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.5 H.sub.4 --(CH.sub.2).sub.q --Z, 1,2--(CH.sub.2).sub.p --C.sub.4 H.sub.6 --(CH.sub.2).sub.q --Z;
- p and q, in each case independently of one another, are 0, 1, 2 or 3;
- is --NR.sup.4 R.sup.5, --PR.sup.4 R.sup.5, --AsR.sup.4 R.sup.5 or --SbR.sup.4 R.sup.5 ;
- and is a branch alkyl or alkenyl group, in each case having 3-8 C atoms, it being possible for these groups to be partly or fully fluorinated, a cycloalkyl or cycloalkenyl group, in each case having 3-8 C atoms, or an aryl group.
Dependencies are inferred from the claim text.