Method and apparatus for large-area electrical contacting of a semiconductor crystal body with the assistance of electrolytes
AssigneeSiemens Aktiengesellschaft
InventorsHelmut Foell, Volker Lehmann
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AssigneeSiemens Aktiengesellschaft
InventorsHelmut Foell, Volker Lehmann
Estimating the term…
A semiconductor crystal wafer is fixed between two electrolyte-filled cells so that the front surface and rear surface thereof are respectively in contact with an electrolyte. A respective electrode is located in the electrolyte, a DC voltage being applied between these electrodes so that the semiconductor-to-electrolyte contact of the one cell is polarized in the conducting direction and the other is polarized in the non-conducting direction. A current flow through the semiconductor crystal body is enabled in that the inhibiting surface of the semiconductor crystal is illuminated and charge carriers are generated as a result thereof. On the basis of the selection of suitable electrolytes and the intensity of illumination, high current density is possible even given high-impedance semiconductor crystal wafers as well as semiconductor crystal bodies having doping steps or pn junctions. The method is particularly simple in many semiconductor processing and analyses methods.
A method of establishing large-area electrical contacting of a semiconductor crystal body which includes a first side with a first surface and a second side with a second surface, comprising the steps of:
A method of establishing large-area electrical contacting of a semiconductor crystal body which includes a first side with a first surface and a second side with a second surface, comprising the steps of:
Apparatus for large-area electrical contacting of a semiconductor crystal body which comprises a first side including a first surface and an opposite second side including a second surface, comprising:
Dependencies are inferred from the claim text.