Article comprising a DFB semiconductor laser
AssigneeAT&T Bell Laboratories
InventorWon-Tien Tsang
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Abstract
DFB lasers with advantageously structured grating region are disclosed. The grating region comprises one or more thin semiconductor layers (to be referred to as "QWs"), with the QWs varying periodically in the longitudinal direction of the laser. In an exemplary preferred embodiment the AWs are patterned during grating etch, with the topmost grating QW being covered with a layer of substantially the substrate composition. The structure inter alia facilitates defect-free epitaxial growth on the corrugated etched surface and also facilitates growth of the coupling coefficient .kappa.. Furthermore, lasers according to the invention can be partially or purely gain coupled, resulting in desirable wavelength discrimination.
Claims8
An article comprising a DFB laser that comprises a semiconductor body comprising a multiplicity of epitaxial semiconductor layers on a semiconductor substrate comprising
- a) a periodically varying first semiconductor region (the "grating" region), associated with the grating region being a period .LAMBDA.;
- b) a second semiconductor region (the "active" region) suitable for generation of electromagnetic radiation of wavelength .lambda. through electron-hole recombination therein, said active region being spaced apart from said grating region;
- and
- c) said laser further comprises contact means that facilitate flowing an electrical current through said semiconductor body;
- associated with said laser being a radiation emission direction;
- CHARACTERIZED IN THAT
- d) said grating region comprises one or more semiconductor layers of a first composition, a given first composition layer being sandwiched between semiconductor material of a second composition and varying in said radiation emission direction with period .LAMBDA..
Dependencies are inferred from the claim text.