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AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKaori Okamoto, Yasuo Wakahata, Iwao Ueno
Estimating the term…
The present invention provides a semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure made of Sr.sub.(1-x) Ca.sub.x TiO.sub.3 as a main component, comprising the functions of a conventional capacitor which absorbs low voltage noises and high frequency noises, and a varistor when high voltage noises and electrostatic charges invade, wherein simultaneous sintering of the materials of ceramic capacitor together with the materials of inner electrodes was made possible in the manufacturing process. Besides, material to be made semiconductive is added to the main component of Sr.sub.(1-x) Ca.sub.x TiO.sub.3 excess in Ti, the materials of Mn-Si, which are converted to MnO.sub.2 and SiO.sub.2 in the sintering process, are also added to the main component. A grain boundary insulated, semiconductor type capacitor is manufactured easily using only a re-oxidation process by using the starting material of the above-described composition, thereby eliminating surface diffusion process of metal oxides which is used in manufacturing conventional capacitors. According to the manufacturing method of the present invention, calcination process of laminated raw sheets prevents troubles occurring in laminated ceramic capacitors with varistor function, such as breaks of electric connections in inner electrodes; de-lamination of ceramic sheet; cracks in ceramic sheet; decrease of sintering density; and non-uniformity in the texture of sintered body, thereby improving electric characteristics, i.e. capacitance, voltage non-linearity coefficient .alpha. and varistor voltage, and reliability of the products. The present invention provides two major advantages in the composition of materials and in the manufacturing process.
A semiconductor-type laminated ceramic capacitor with a grain boundary insulated structure comprising a plurality of inner electrodes on the surfaces of the grain boundary insulated, semiconductor type ceramic sheets, the terminal of each of said inner electrodes being extended to one edge of the corresponding ceramic sheet and said ceramic sheets being laminated so that said terminals of said inner electrodes come to the corresponding opposite edges of said ceramic sheets alternatively one by one;
A method for manufacturing semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising the steps of calcinating starting material of mixed powder in air or in nitrogen atmosphere after grinding, mixing and drying said mixed powder;
A semiconductor-type laminated ceramic capacitor with a grain boundary-structure comprising a plurality of inner electrodes on the surfaces of the grain boundary insulated, semiconductor type ceramic sheets, the terminal of each of said inner electrodes being extended to one edge of the corresponding ceramic sheet and said ceramic sheets being laminated so that said terminals of said inner electrodes come to the corresponding opposite edges of said ceramic sheets alternatively one by one;
A method for manufacturing semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising the steps of calcinating starting material of mixed powder in air or in nitrogen atmosphere after grinding, mixing and drying said mixed powder;
A semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising a plurality of inner electrodes on the surfaces of the grain boundary insulated, semiconductor type ceramic sheets, the terminal of each of said inner electrodes being extended to one edge of the corresponding ceramic sheet and said ceramic sheets being laminated so that said terminals of said inner electrodes come to the corresponding opposite edges of said ceramic sheets alternatively one by one;
A method for manufacturing semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising the steps of calcinating starting material of mixed powder in air or in nitrogen atmosphere after grinding, mixing and drying said mixed powder;
A semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising a plurality of inner electrodes on the surfaces of the grain boundary insulated, semiconductor type ceramic sheets, the terminal of each of said inner electrodes being extended to one edge of the corresponding ceramic sheet and said ceramic sheets being laminated so that said terminals of said inner electrodes come to the corresponding opposite edges of said ceramic sheets alternatively one by one;
A method for manufacturing semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising the steps of calcinating starting material of mixed powder in air or in nitrogen atmosphere after grinding, mixing and drying said mixed powder;
A grain boundary insulated, semiconductor type laminated ceramic capacitor comprising a plurality of inner electrodes on the surfaces of the grain boundary insulated, semiconductor type ceramic sheets, the terminal of each of said inner electrodes being extended to one edge of the corresponding ceramic sheet and said ceramic sheets being laminated so that said terminals of said inner electrodes come to the corresponding opposite edges of said ceramic sheets alternatively one by one;
A method for manufacturing semiconductor-type laminated ceramic capacitor with a grain boundary-structure comprising the steps of:
A semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising a plurality of inner electrodes on the surfaces of the grain boundary insulated, semiconductor type ceramic sheets, the terminal of each of said inner electrodes being extended to one edge of the corresponding ceramic sheet and said ceramic sheets being laminated so that said terminals of said inner electrodes come to the corresponding opposite edges of said ceramic sheets alternatively one by one;
A method for manufacturing a semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising the steps of:
A semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising a plurality of inner electrodes on the surfaces of the grain boundary insulated, semiconductor type ceramic sheets, the terminal of each of said inner electrodes being extended to one edge of the corresponding ceramic sheet and said ceramic sheets being laminated so that said terminals of said inner electrodes come to the corresponding opposite edges of said ceramic sheets alternatively one by one;
A method for manufacturing semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising the steps of:
A semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising a plurality of inner electrodes on the surfaces of the grain boundary insulated, semiconductor type ceramic sheets, the terminal of each of said inner electrodes being extended to one edge of the corresponding ceramic sheet and said ceramic sheets being laminated so that said terminals of said inner electrodes come to the corresponding opposite edges of said ceramic sheets alternatively one by one;
A method for manufacturing semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure comprising the steps of:
Dependencies are inferred from the claim text.