High power compact microwave amplifier
AssigneeSystron Donner Corporation
InventorsHarvey Endler, Hadi Mojaradi
Life of this patent
Estimating the term…
Abstract
A Class A high power amplifier having an operating frequency in the range of less than substantially 2 GHz and suitable for aircraft use, is all solid state in that gallium arsenide field effect transistors are utilized. These are mounted in a large copper heat sink which is air cooled to provide for overall cooling by conduction and convection. By the use of microstrip matching circuits, the relatively low impedance of the gallium arsenide FET units is matched to the required higher system impedance. At the same time a 40% band-width is provided due to the superior matching.
Claims6
A class A power amplifier having an operating frequency in the range of less than substantially 2 GHz comprising:
- a plurality of parallel connected gallium arsenide (GaAs) field effect transistors (FETs) providing a high power output in the range of at least 100 watts, said FETs having a relatively low input and output impedance compared to a required normal relatively high system impedance;
- a microstrip matching circuit mounted on a dielectric substrate for matching said relatively high system impedance to said input and output impedance of said FETs, each substrate being dimensioned in accordance with the frequency 2 GHz or less, said substrates being substantially 1 by 1 inch in size;
- a plurality of conductive bases for providing a thermal expansion match with said dielectric substrate, said conductive bases also providing a direct mounting surface for said plurality of FETs, each of said bases carrying a pair of said FETs along with said microstrip matching circuits carried on said dielectric substrates;
- heat sink means for cooling said FETs including a unitary copper base in which said FETs are inset via said conductive base whereby cooling is accomplished by at least conduction.
Dependencies are inferred from the claim text.