Semiconductor device and manufacturing method therefor

A semiconductor device having two main surfaces comprising:

• a semiconductor substrate of a first or second conductivity type forming one of said main surfaces and having a first main electrode formed on said main surface;
• a first semiconductor region of the first conductivity type formed on said semiconductor substrate and forming the other main surface;
• a plurality of second semiconductor regions of the second conductivity type exposed at said other main surface, wherein the second semiconductor regions are arranged side by side so that longitudinal axes of said second semiconductor regions are parallel to one another, wherein said second semiconductor regions include a pair of end second semiconductor regions located, respectively, at the ends of the plurality of second semiconductor regions so that one of said end second semiconductor regions is adjacent to one peripheral area of the other main surface while the other of said end second semiconductor regions is adjacent to another peripheral area of the other main surface, and wherein the second semiconductor regions further include a plurality of interior second semiconductor regions located between said pair of end second semiconductor regions;
• a plurality of insulated gate electrodes, each formed, with an insulating film interposed, on said other main surface and on said first semiconductor region located between adjacent ones of said second semiconductor regions and on portions of said adjacent ones of said second semiconductor regions;
• third semiconductor regions of the first conductivity type respectively formed extending from said other main surface into said second semiconductor regions so that a portion of each of said third semiconductor regions is located beneath an end of one of said insulated gate electrodes, wherein said third semiconductor regions include a pair of end third semiconductor regions respectively formed in the pair of end second semiconductor regions;
• a fourth semiconductor region of the second conductivity type located contiguous to respective peripheral sides of the end second semiconductor regions said peripheral sides being parallel to the longitudinal axes of said end second semiconductor regions, said fourth semiconductor region being formed to extend into said first semiconductor region deeper than all of said second semiconductor regions and having a higher impurity concentration than an impurity concentration of said second semiconductor regions;
• and
• a second main electrode in contact with said second semiconductor regions and said third semiconductor regions with a low resistance at said other main surface,
• wherein in the end second semiconductor regions contiguous to said fourth semiconductor region, the contact part between said second main electrode and said end second semiconductor regions is located at a peripheral side with respect to the contact part between said second main electrode and said respective end third semiconductor regions.

A semiconductor device having two main surfaces comprising:

• a semiconductor substrate of a first or second conductivity type forming one of said main surfaces and having a first main electrode formed on said main surface;
• a first semiconductor region of the first conductivity type formed on said semiconductor substrate and forming the other main surface;
• a plurality of second semiconductor regions of the second conductivity type exposed at said other main surface, wherein the second semiconductor regions are arranged side by side so that longitudinal axes of said second semiconductor regions are parallel to one another, wherein said second semiconductor regions include a pair of end second semiconductor regions located, respectively, at the ends of the plurality of second semiconductor regions so that one of said end second semiconductor regions is adjacent to one peripheral area of the semiconductor regions is adjacent to another peripheral area of the other main surface, and wherein the second semiconductor regions further include a plurality of interior second semiconductor regions located between said pair of end second semiconductor regions;
• a plurality of insulated gate electrodes, each formed, with an insulating film interposed, on said other main surface and on said first semiconductor region located between adjacent ones of said second semiconductor regions and on portions of said adjacent ones of said second semiconductor regions;
• third semiconductor regions of the first conductivity type respectively formed extending from said other main surface into said second semiconductor regions so that a portion of each of said third semiconductor regions is located beneath an end of one of said insulated gate electrodes, wherein said third semiconductor regions include a pair of end third semiconductor regions respectively formed in the pair of end second semiconductor regions;
• a fourth semiconductor region of the second conductivity type contiguous to only the end second semiconductor regions, and contiguous to the end third semiconductor regions, said fourth semiconductor region being formed to extend into said first semiconductor region deeper than all of said second semiconductor regions and having a higher impurity concentration than an impurity having a higher impurity concentration than an impurity concentration of said second semiconductor regions;
• and
• second main electrodes, one of said second main electrodes being in contact with at least one of the end third semiconductor regions and said fourth semiconductor region with a low resistance at said other main surface and another of said second main electrodes being in contact with the second semiconductor regions and the third semiconductor regions with a low resistance at said other main surface in areas other than the peripheral areas of said other main surface,
• wherein with regard to said at least one of said second main electrodes, the contact part between said second main electrode and said fourth semiconductor region is located at a peripheral side with respect to the contact part between said second main electrode and said respective end third semiconductor region which is contiguous to said fourth semiconductor region.