Method for producing SOI substrate
AssigneeRohm Co., Ltd.
InventorTomofumi Nakamura
Life of this patent
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Abstract
A method for producing a SOI substrate comprising: a step of forming a first opening to an insulating film on a semiconductor substrate and then forming semiconductor crystal layer by epitaxial growth over the first opening and the insulating film; a step of forming a second opening by partially removing the semiconductor crystal layer; a step of forming an integrated insulating film, and a step of forming an integrated semiconductor crystal layer. With the present invention, a semiconductor crystal layer can be formed on an insulating film on a substrate with large area, wherein the crystal layer and the substrate is completely insulated from each other. Further even from such materials as hard to form monocrystal substrate, a substrate can be easily obtained.
Claims4
A method for producing a SOI substrate comprising:
- a step wherein a first opening is formed at an insulating film formed on a semiconductor substrate and then a semiconductor crystal layer is formed over the first opening and the insulating film by epitaxial growth with using the semiconductor crystal of the substrate exposed through the first opening as a seed;
- a step wherein a second opening is formed by removing the semiconductor crystal layer formed in the first opening;
- a step wherein another insulating film is formed on the exposed semiconductor substrate through the second opening to be integrated with the insulating film;
- and
- a step wherein on the another insulating film formed in the second opening semiconductor crystal is further formed by epitaxial growth in the transverse direction with using the semiconductor crystal by epitaxial growth as a seed to form a semiconductor crystal layer integrated with the semiconductor crystal layer.
A method for producing a SOI substrate comprising:
- a step wherein a first opening is formed at an insulating film formed on a semiconductor substrate and then a semiconductor crystal layer is formed over the first opening and the insulating film by epitaxial growth with using the semiconductor crystal of the substrate exposed through the first opening as a seed;
- a step wherein a second opening is formed by removing the semiconductor crystal layer formed in the first opening;
- a step wherein another insulating film is formed on the exposed semiconductor substrate through the second opening to be integrated with the insulating film;
- a step wherein an silicon oxide film formed on the semiconductor crystal layer during formation of the another insulating film is removed;
- and
- a step wherein on the another insulating film formed in the second opening and on the semiconductor crystal layer, semiconductor crystal is further formed by epitaxial growth with using the semiconductor crystal formed by epitaxial growth as a seed.
Dependencies are inferred from the claim text.