Generation of fluorine via thermal plasma decomposition of metal fluoride
AssigneeCameco Corporation
InventorsRobert C. Burk, Maher I. Boulos, Dennis G. Garratt, Tadeusz W. Zawidzki, Andrzej Huczko
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Abstract
A compound MF.sub.n, where M is a metal and n is the valency of the metal and has a value between 1 and 6, is subjected to a thermal plasma at a temperature in excess of 3000 K to dissociate it into the metal and fluorine. Also present in the reactor is an added reactant that will react with the metal or the fluorine to prevent their recombination so that there is formed fluorine gas or a fluoride other than the fluoride of the metal M.
Claims9
A process for producing free fluorine gas or a fluoride, which comprises subjecting the compound MF.sub.n, where M is a metal and n is the valency of the metal and has a value from 1 to 6 inclusive, to the effect of a thermal plasma at a temperature of at least 3000 K to cause MF.sub.n to separate into its constituents, the reaction being carried out in the presence of an added oxide of uranium that reacts with the metal and/or the fluorine to prevent their recombination so that there is formed a fluoride of uranium.
Dependencies are inferred from the claim text.