Crystal growth method and crystalline article obtained by said method
AssigneeCanon Kabushiki Kaisha
InventorHideya Kumomi
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Abstract
A crystal growth method for crystallizing an amorphous thin film comprises heat-treating an amorphous thin film having a region (I) with a predetermined film thickness and a region (II) with a larger film thickness than the region (I) and having a sufficiently small area so as to form only a single nucleus from which a single crystal is grown by solid phase growth at a temperature not higher than the melting point of the film.
Claims17
A crystal growth method for crystallizing an amorphous thin film, comprising heat-treating an amorphous thin film having a region (I) with a first film thickness and a region (II) with a second film thickness larger than said region (I) and having a sufficiently small area so as to form only a single nucleus from which a single crystal is grown by solid phase growth at a temperature not higher than the melting point of the film.
A crystal growth method for crystallizing an amorphous thin film, comprising:
- implanting ions into an amorphous thin film having a region (I) with a first film thickness and a region (II) with a second film thickness larger than said region (I) and having a sufficiently small area so as to form only a single nucleus from which a single crystal is grown by solid phase growth, and
- heat-treating the ion-implanted amorphous thin film at a temperature not higher than the melting point of the film.
Dependencies are inferred from the claim text.